Micro LED display panel and preparation method thereof

Abstract

The embodiment of the invention discloses a micro LED display panel and a preparation method thereof. In one specific embodiment, the method comprises the steps of forming a driving circuit layer; forming a first anode, a second anode and a third anode; sequentially depositing a first P-type GaN layer, a first InGaN layer, a first N-type GaN layer and a first transparent electrode on the first anode; sequentially depositing a second P-type GaN layer, a second InGaN layer or a first InAlGaP layer, a second N-type GaN layer and a second transparent electrode on the second anode; sequentially depositing a third P-type GaN layer, a second InAlGaP layer, a third N-type GaN layer and a third transparent electrode on the third anode; forming a pixel defining layer; and forming a cathode. According to the embodiment, a high-temperature evaporation means required for preparing the micro-LED in the prior art can be avoided, the manufacturing yield of the micro-LED display panel can be increased, and the quality of the micro-LED display panel can be improved.

Description

technical field [0001] This application relates to the field of display technology. More specifically, it relates to a micro-LED display panel and a preparation method thereof. Background technique [0002] Micro-LED Display (miniature light-emitting diode display) due to its advantages of ultra-high pixels, ultra-high resolution, high brightness, low power consumption, stable material performance, long life and no image burn-in, its performance is much higher than that of existing LCD (Liquid Crystal Display, Liquid Crystal Display) and OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode), therefore, are widely used in fields such as micro-projection, transparent display, and head-up display. [0003] Usually displays made of Micro-LED or QNED etc. cut the nano-scale color LED (light-emitting diode) 100 made on the sapphire substrate into micron-scale size, and then cut them on the glass substrate or PI (Polyimide, polyimide) It is made by transfer on the act...

AI Technical Summary

Problems solved by technology

The preparation method of prior art is to form light-emitting diode (diode), needs to carry out high-temperature vapor deposition, needs to use sapphire substrate for this reason, thereby increases manufacturing cost; Moreover, usually each pixel in the display of large area, high resolution uses 1: 1 (Micro-LED) or 1-to-many (5-50, QNED) corresponds to LEDs. Therefore, it is necessary to transfer tens of millions of LEDs on tens of millions of pixels. This method transfers a huge amount of LEDs to pixels The process will have the problem of production yield decline in extreme proportions, which will further increase the manufacturing cost

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