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Exhaustion ring and plasma processing device

A plasma and exhaust ring technology, applied in plasma, electrical components, gaseous chemical plating, etc., can solve the problems of poor shielding effect and achieve good shielding effect

Inactive Publication Date: 2009-05-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The above-mentioned prior art has at least the following disadvantages: the shielding effect of the exhaust ring 5 on the plasma is relatively poor

Method used

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  • Exhaustion ring and plasma processing device
  • Exhaustion ring and plasma processing device
  • Exhaustion ring and plasma processing device

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Embodiment Construction

[0020] The exhaust ring of the present invention, its preferred embodiment is as Figure 5 As shown, the main body 12 is included, the main body 12 is annular, and the main body 12 is provided with a plurality of through holes 3, and the through holes 3 have at least one section inclined to the plane of the main body 12 in the longitudinal direction, that is to say, the through holes 3 are not perpendicular to the plane of the main body 12. A straight hole on the surface of the body 12.

[0021] Such as Figure 6 As shown, the through hole 3 may be a slanted hole, the longitudinal axis of which is inclined to the plane of the body 12 .

[0022] Such as Figure 7 As shown, the through hole 3 is a broken line hole, which can be composed of two or more broken lines.

[0023] The through hole 3 can also be a labyrinth hole, a curved hole, an L-shaped hole or other holes, as long as it is not a straight hole perpendicular to the surface of the body 12 .

[0024] The cross secti...

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Abstract

The invention discloses an exhaust ring and a plasma processing device; wherein, the exhaust ring is provided with a plurality of through holes, at least one section of which is inclined to the plane of a body in the longitudinal direction; the through hole can be an inclined hole, a labyrinth hole, a curve hole or a broken line hole, and the like. The cross-section of the through hole can be round, ellipse, long round, triangle or echelon, and the like. After the exhaust ring is arranged between a reaction chamber and a pumping chamber of the plasma processing device, during the pumping process, the through hole has a certain barrier effect on the plasma, thus having good shielding effect on the plasma.

Description

technical field [0001] The invention relates to a semiconductor processing device, in particular to an exhaust ring and a plasma processing device. Background technique [0002] In the field of semiconductor processing, semiconductor substrates need to be processed by plasma in the reaction chamber of the plasma processing device, such as etching and vapor deposition. Therefore, it is necessary to apply radio frequency to the reaction chamber, so that the process gas entering the reaction chamber is excited into plasma, and then semiconductor processing is performed. [0003] Since the material of the reaction chamber is generally aluminum, even though the surface of the reaction chamber has been treated (usually anodized), it will still react with the plasma in the chamber, causing damage to equipment parts or polymer damage. deposition. Therefore, it is necessary to confine the plasma to a certain area during the etching process and separate the vacuum from the plasma. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3065H01L21/205H01L21/67H01J37/32H05H1/00C23C16/513C23F4/00
Inventor 赵梦欣
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD