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Self-aligning manufacturing method for antimonous schottky diode

A Schottky diode, self-alignment technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve low-cost effects

Active Publication Date: 2011-05-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, how to solve the problem of incompatibility between the metal and semiconductor technology used in the existing Schottky diodes and realize low-cost manufacturing has become an urgent need for those skilled in the art. Technical issues to be solved

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  • Self-aligning manufacturing method for antimonous schottky diode
  • Self-aligning manufacturing method for antimonous schottky diode
  • Self-aligning manufacturing method for antimonous schottky diode

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Embodiment Construction

[0022] see Figure 1A and Figure 1B , the antimony-based Schottky diode 4 of the present invention at least includes: a lightly doped semiconductor layer 2 and a metal layer 3 .

[0023] The lightly doped semiconductor layer 2 is formed on the heavily doped semiconductor layer 1, and the material used may be silicon, germanium, or III-V compounds.

[0024] The metal layer 3 is formed on the lightly doped semiconductor layer 2 and forms a Schottky contact with the lightly doped semiconductor layer 2, and the metal used is pure antimony or an alloy of antimony-containing materials.

[0025] Such as Figure 1B As shown, the Schottky diode 4 is connected to the variable resistor 5 of the phase-change memory unit (such as GeSbTe unit), so that the gate of the phase-change memory unit can be realized.

[0026] see Figure 2A-2H , which is a flow chart of a method for self-aligning an antimony-based Schottky diode array of the present invention.

[0027] Method of the present i...

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Abstract

The invention provides an antimonial based Schottky diode which comprises a light doped semiconductor layer and a metal layer tightly contacted with the light doped semiconductor layer, wherein the metal layer contains antimony. In addition, the invention also provides a plurality of methods for self-aligning and manufacturing an antimonial based Schottky diode array; firstly, a second conductiontype heavy doped layer is formed on an intrinsic semiconductor substrate or a first conduction type semiconductor substrate; secondly, second conduction type light doped regions are formed on the second conduction type heavy doped layer; and finally antimonial metal regions are deposited in the light doped region by a self-aligning method in order that each metal region and the corresponding light doped region form Schottky contact; and the Schottky diode array is further manufactured.

Description

technical field [0001] The invention relates to a Schottky diode manufacturing method, in particular to a method for self-aligning Schottky diode arrays based on antimony. Background technique [0002] As a commonly used logic device, diodes are widely used due to their small size, especially in high-density and high-performance memories, and they have become the preferred logic devices. The application of diodes will not only greatly increase the storage capacity of the next-generation memory, but also greatly reduce the volume of the memory to meet more demands. [0003] In the research and development of new next-generation non-volatile memories such as phase-change memory, the density advantage of diodes compared with field-effect transistors has attracted widespread attention. Phase-change memory based on diodes is obviously more capable in high-density applications. Advantage. Currently, PN type diodes are widely used in high-density memories such as phase-change me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/822
Inventor 张挺宋志棠顾怡峰刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI