Method for measuring focus offsets of exposure tool
An offset and machine technology, used in microlithography exposure equipment, photolithography process exposure devices, etc., can solve the problems of low sensitivity, easy to have abnormal measurement, abnormal drift of curve vertices, etc.
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[0015] In the measurement method of the present invention, when utilizing the main optical axis of the exposure during exposure and the movement direction of the silicon wafer platform (the silicon wafer is placed on the platform during exposure) to be non-perpendicular, the silicon wafer is exposed under different focal lengths, and the pattern will produce horizontal deviation. The principle of shifting is used to measure the offset of the focal length of the exposure machine.
[0016] figure 2 It is a schematic diagram of the principle of the measurement method of the present invention, the inclination of the incident light is θ, exposure is performed under different focal lengths, the offset of the first exposure pattern and the second exposure pattern is S, and the focal length of the exposure machine shifts The quantity is ΔF, and when θ and S are known, ΔF can be obtained according to the following formula: tanθ=S / ΔF ΔF=S / tanθ
[0017] Utilizing the above princ...
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