Trench construction in MOS transistor

Abstract

The invention discloses a channel structure of an MOS transistor, which is used in the power MOS transistor. The surface of a silicon substrate in a channel zone is provided with a plurality of slots of which the lengthwise direction is the same as the moving direction of the current in the channel zone when the MOS transistor works. Because the channel zone is additionally provided with the slots, the channel is changed from a single plane to multi-planes, so that under conditions of not changing the size of the device, the effective length of the channel of the device is increased, and the driving capacity of the device is also enhanced.

Description

technical field [0001] The invention relates to a method for preparing a MOS transistor, in particular to a method for preparing a channel in a power MOS transistor. Background technique [0002] In VLSI, power MOSFETs are widely used in ultrasonic transducers, flat panel display drivers, communication circuits, integrated microsystems, automotive electronics, small DC motor control, inkjet printers, switching power supplies and in medical instruments. In these applications, the circuit is required to have a large output current. The channel in a conventional metal-oxide-semiconductor structure is planar, such as figure 1 with figure 2 As shown, the silicon surface between the source and drain implanted regions under the gate oxide layer of the polysilicon gate is the channel region. In order to increase the driving current of the device, it is often necessary to increase the width of the gate. But doing so will increase the area of ​​the device, which is not conducive...

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Problems solved by technology

But doing so will increase the area of ​​the device, which is not conducive to the manufacture of the circuit and the reduction of cost

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