Chemico-mechanical polishing liquid
A technology of polishing liquid and vinylpyrrolidone, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as polysilicon sags, achieve the effect of reducing sags and improving planarization efficiency
Active Publication Date: 2013-10-02
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
[0006] The technical problem to be solved by the present invention is to overcome the polysilicon removal rate of the chemical mechanical polishing liquid used for polishing polysilicon and silicon dioxide layers in the prior art, which is much higher than the removal rate of silicon dioxide, which easily leads to excessive removal of polysilicon and produces depressions Defects, while providing a chemical mechanical polishing solution with a lower polysilicon removal rate and polysilicon to silicon dioxide removal rate selectivity, which can reduce dishing
Method used
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Embodiment 1～6
[0016] Table 1 provides polishing liquid 1~6 of the present invention, according to the formula in the table, mix each component evenly, surplus is water, adopt potassium hydroxide and nitric acid to adjust to suitable pH value afterwards and can make each polishing liquid .
[0017] Table 1 Polishing liquid 1~6 formula of the present invention
[0018]
[0019]
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Abstract
The present invention discloses a chemical machinery polishing solution which contains seat grinding granule and water, and n-vinyl-2-pyrrolidone polymeric compound. The polishing solution provided in the invention has low polycrystalline silicon removal rate, and removal rate selection ratio between polycrystalline silicon and silicon dioxide, which can reduce depression and improve plainness efficiency of polycrystalline silicon significantly.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] For the polishing of polysilicon, it is mainly used in two kinds of chips at present, one is DRAM, and the other is Flash. In the latter application, the polishing of silicon dioxide is often involved in the polishing of polysilicon. [0003] In the prior art, the polysilicon layer and the silicon dioxide (such as HDP) layer are mainly polished with an alkaline slurry containing silicon dioxide as abrasive particles, and the removal rate of polysilicon is often much higher than that of silicon dioxide. It is easy to lead to excessive removal of polysilicon and cause depressions, which will affect subsequent processes. [0004] US2003 / 0153189A1 discloses a chemical mechanical polishing liquid for polishing polysilicon and its usage method. The polishing liquid includes a polymeric surfactant and an abrasive particle selected from aluminum oxide and cerium o...
Claims
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IPC IPC(8): H01L21/302
Inventor 荆建芬杨春晓
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD