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Ashing method

A technology of ashing and oxidizing gas, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc. It can solve the problems of remaining photoresist and affecting device performance, and achieve the effect of avoiding device performance.

Inactive Publication Date: 2009-06-17
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0005] The invention provides an ashing method, which solves the problem that the photoresist in the prior art reacts with the plasma of dry etching and hardens at high temperature, so that after ashing, the photoresist remains on the surface of the wafer, which affects the Device Performance Issues

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Embodiment approach

[0017] refer to figure 1 Shown, an embodiment of the method for ashing of the present invention comprises the following steps,

[0018] Step s1, after dry etching and before ashing to remove the photoresist, soften the photoresist by introducing hydrogen-containing gas into the photoresist;

[0019] Step s2, performing a first ashing step, the first ashing step adopts hydrogen-containing gas and oxidizing gas at the same time;

[0020] In step s3, a second ashing step is performed, and the second ashing step uses an oxidizing gas.

[0021] The hydrogen-containing gas is hydrazine, hydrogen or other hydrogen-containing gas, the flow rate of the hydrogen-containing gas is 800sccm-1000sccm / min, the reaction pressure of the softened photoresist is 600mT-650mT, and the temperature is 250°C , the time for softening the photoresist is 45 seconds.

[0022] The first ashing step uses hydrogen-containing gas and oxidizing gas at the same time, the hydrogen-containing gas is hydrazine...

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Abstract

The invention relates to an incineration method, which comprises introducing softened photosensitive resist containing hydrogen gas into photosensitive resist after dry etching and before removing the photosensitive resist by incineration. The incineration method avoids the condition that the photosensitive resist can not be fully removed during incineration as the photosensitive resist is hardened, so as to avoid the influence of the residual photosensitive resist on the performance of devices.

Description

technical field [0001] The present invention relates to a method of ashing. Background technique [0002] As one of the important processes of the semiconductor process, the photolithography process usually includes the following steps: spin-coating photoresist on the semiconductor wafer to form a photoresist layer; selectively exposing the photoresist layer, and making the exposed photoresist layer The photoresist layer is further formed into a photoresist pattern; the semiconductor wafer is etched using the photoresist layer as a mask; and the ashing step after the etching is completed to remove the photoresist layer. [0003] The currently commonly used ashing process uses plasma gas containing oxygen or oxygen ions to remove photoresist. The ashing process is generally carried out in a reaction chamber. The semiconductor wafer is placed in the reaction chamber, heated under low pressure, and plasma gas is introduced into the reaction chamber. Since the ashing rate of t...

Claims

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Application Information

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IPC IPC(8): G03F7/42G03F7/36G03F7/26
Inventor 周鸣尹晓明
Owner SEMICON MFG INT (SHANGHAI) CORP
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