Wafer quality analysis apparatus and method

A quality analysis device and quality analysis technology, applied in the direction of comprehensive factory control, instrumentation, comprehensive factory control, etc., can solve the problems of missing wafer process and incomplete analysis of wafer quality analysis methods, and achieve the effect of improving accuracy

Inactive Publication Date: 2009-06-17
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 35 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a wafer quality analysis device and method to solve the problem of incomplete analysis o

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer quality analysis apparatus and method
  • Wafer quality analysis apparatus and method
  • Wafer quality analysis apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0039] refer to figure 1 As shown, an embodiment of the wafer quality analysis method of the present invention comprises the following steps,

[0040] Step s1, performing correlation analysis according to at least two types of collected wafer analysis data;

[0041] Step s2, determining key parameters according to relevant analysis results;

[0042] Step s3, judging whether the data range of key parameters is much larger than the coverage range of the control standard, far smaller than the coverage range of the control standard or suitable for the coverage range of the control standard, if the data range of the key parameter is suitable for the coverage range of the control standard, Then execute step s4; if the data range of the key parameter is much smaller than the coverage of the control standard, then execute step s5; if the data range of the key parameter is far beyond the coverage of the control standard, then execute step s6;

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a wafer quality analysis device which includes: a data base for temporary storing wafer analysis data, reference data and middle result; a data analysis unit for calling at least two wafer analysis data in the data base to process correlated analysis and output correlated analysis result; an optimizing unit for determining and outputting key parameter list according with correlated analysis result output by the data analysis unit, and optimizing and outputting control standard or wafer production according with monitor result feedback by a statistic process control unit; a statistic processes control unit for collecting wafer analysis data, monitoring key parameter according with the key parameter list output by the optimizing unit, and feedback monitored result to the optimizing unit, and monitoring the key parameter again according with optimizing control standard or wafer production output by the optimizing unit, and outputting wafer analysis result finally. The invention also discloses a wafer quality analysis method. The wafer quality analysis device and method increase accuracy of quality analysis.

Description

technical field [0001] The invention relates to a wafer quality analysis device and method. Background technique [0002] Currently, wafer fabrication processes require high levels of precision in process control, equipment operation, and material fabrication. One mistake could result in the complete scrapping of the wafer. Wafer and process quality assessments are made through extensive testing and measurements throughout the process. Among them, wafer yield rate and acceptable test data are important indicators to measure whether the performance of the produced wafer is reliable. [0003] Wafer yield is simply the ratio of effective die on the wafer to all die on the wafer. Wafer yield is constrained by many aspects, for example, wafer breakage and bending, process variation, process defects and lithography mask defects will all have an impact on wafer yield. In order to ensure the performance of the wafers provided to customers, it is necessary to analyze the wafer yi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G05B19/418G06Q10/00
CPCY02P90/02
Inventor 简维廷杨斯元
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap