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Method for the production of copper-chromium contacts for vacuum switches, and associated switching contacts

A manufacturing method and technology of switch contacts, which are applied to contacts, electric switches, high-voltage/high-current switches, etc., can solve problems such as unfavorable switching and burning characteristics, and achieve improved switching characteristics, low operating costs, and low costs. Effect

Inactive Publication Date: 2009-06-17
SIEMENS AG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, in sintered materials due to production technology, the particle size distribution is shifted towards significantly larger particle sizes, which leads to less favorable switching and burning behavior compared to remelted materials

Method used

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  • Method for the production of copper-chromium contacts for vacuum switches, and associated switching contacts
  • Method for the production of copper-chromium contacts for vacuum switches, and associated switching contacts
  • Method for the production of copper-chromium contacts for vacuum switches, and associated switching contacts

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Embodiment Construction

[0028] Figure 1 shows a chromium-copper phase diagram in the following manner, with 100% chromium content on the left and 100% copper content on the right. It is well known that chromium has a relatively high melting point, ie 1550°C. In contrast, copper has a relatively low melting point of 1083°C. The eutectic formed at a temperature of 1075°C with a copper content of 98.2. There is a narrow solubility range for chromium below the melting point of copper. In addition, solid copper and chromium are insoluble in each other below 700°C.

[0029] Furthermore, the chromium-copper phase diagram also has the characteristic of a mixed interstitial (Mischungslücke) in the liquid state, in which a meta-eutectic is formed: above the meta-eutectic temperature of 1470° C., between about 6% copper and 58% copper Two different mutually immiscible CuCr melts appear in the range up to a temperature of about 2000°C.

[0030] The latter means for the practical manufacture of homogeneous co...

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Abstract

Homogeneous copper-chromium alloys can be produced at best by rapidly supercooling alloys molten at elevated temperatures because of the miscibility gap in the copper-chromium phase diagram. Great efforts are therefore required to produce contacts from said alloys. According to the invention, copper-chromium contacts for vacuum switches are manufactured by producing a thin copper-chromium sheet as a starting material for the contacts, said thin copper-chromium sheet being produced by means of a casting or spraying process, followed by rapid quenching. Concentration profiles in the strip (50) can be adjusted perpendicular to the direction of the strip by adequately conducting the production process because particularly the chromium diffuses to the surface in the form of Cr particles or droplets (Cr).

Description

technical field [0001] The present invention relates to a method for manufacturing copper-chromium contacts of vacuum switches. Furthermore, the invention also relates to a switch contact produced in this way. Background technique [0002] Vacuum switching tubes for energy supply and distribution require electrical switching contacts composed of arc-resistant materials capable of withstanding local over 5MW / cm 2 high temperature loads, do not release gaseous or other harmful pollutants and can be manufactured particularly economically. [0003] In most cases, copper-containing materials are used for the switching contacts in vacuum switching tubes, the main part of which is a mixture containing copper (Cu) and chromium (Cr), wherein the proportion of chromium is generally 20% (mass percent) and 50% % (mass percentage). The special contact shapes used in vacuum switching technology (key or disc, helical, pot, or axial field contacts) require that the contact area must be m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00H01H33/66B22D11/06
CPCH01H1/0203B22D11/0611B22D11/004C22C9/00
Inventor 沃纳·哈特曼罗曼·兰兹安德烈亚斯·斯特尔泽
Owner SIEMENS AG
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