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BSIM3 HCI reliability model used in MOSFET electrical simulation

A reliability and model technology, applied in special data processing applications, electrical digital data processing, instruments, etc., can solve problems such as acceleration, reliability problems, circuit function failures, etc.

Inactive Publication Date: 2009-06-24
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Current and voltage overloads will accelerate this degradation and lead to reliability problems with the potential for functional failure of the circuit

Method used

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  • BSIM3 HCI reliability model used in MOSFET electrical simulation
  • BSIM3 HCI reliability model used in MOSFET electrical simulation
  • BSIM3 HCI reliability model used in MOSFET electrical simulation

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Embodiment Construction

[0035] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0036] The present invention provides a BSIM3 HCI reliability model of 0.35μm-0.5μm standard process MOSFET, which has clear physical meaning and high accuracy, and can simulate the electrical characteristics of MOSFET under certain bias conditions and different bias times .

[0037] In the following, an example will be used to further describe in detail how to apply the BSIM3HCI reliability model of the 0.5 μm standard technology MOSFET of the present invention.

[0038] Please refer to figure 1 , figure 1 It is a structural block diagram of the BSIM3 HCI reliability model. Such as figure 1 As shown, the BSIM3 HCI reliability model of the 0.5 μm standard process MOSFET of the present invention is affected by the hot carrier degradation effect by 7 BSIM3SPICE model parameters, and the formula t...

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Abstract

The invention provides a BSIM3 HCI reliability model which is applied to MOSFET electrical simulation. The model provides a method for calculating output characteristics after the degradation of a transistor impacted by HCI effect according to bias voltage exerting time of MOSFET in a bias voltage condition. The method comprises the following steps: Conditions of the transistor impacted by hot carrier degradation effect and the occurred variation on bias voltage exerting time are considered on the basis of standard BSIM3 model, and meanwhile, parameters of seven standard BSIM3 model are redefined as follows: a long channel threshold voltage Vth0 under a condition of zero Vbs, first-order body effect factor of threshold voltage K1, the mobility ratio under zero offset electric field Mu0, mobility ratio decay effector Muc, channel length modulation parameter of silicon charge effect A0, grid-bias voltage modulation parameter of silicon charge effect Ags and silicon bias voltage modulation parameter Keta of silicon charge effect.

Description

technical field [0001] The invention belongs to the field of integrated circuits, and in particular relates to a BSIM3 integrated circuit simulation program (Simulation Program with Integrated Circuit Emphasis, SPICE) for 0.35 μm-0.5 μm standard process MOSFETs used in the reliability research of Hot Carrier Injection (HCI). ) simulation model. Background technique [0002] Considering the importance of semiconductor product quality and the inverse relationship between product performance and guard band, reliability testing is very necessary for designers in the field of integrated circuit design. When the chip starts to work, the driving capability of the device will decrease as the working time increases. Its important index characteristics, such as threshold voltage, mobility, etc. will migrate accordingly. Current and voltage overloads will accelerate this degradation and cause reliability problems with potential circuit functional failure. Therefore, a SPICE model wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 任铮王星拱唐逸胡少坚石艳玲
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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