Semiconductor device
A semiconductor and component technology, applied in the field of semiconductor devices, can solve the problems of increasing the number of parts of semiconductor devices and complicated parts handling, and achieve the effect of reducing inductance
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Embodiment 1
[0062] refer to Figure 1 to Figure 5 A first embodiment of the semiconductor device of the present invention will be described.
[0063] The semiconductor device described in this embodiment is a power semiconductor device, which is represented as a converter device for driving a driving three-phase motor of an electric vehicle. figure 1 The shown IGBT module represents the main part of the converter arrangement. First, refer to Figure 4 The configuration of the circuit of the IGBT module will be described.
[0064] Figure 4 Indicates a circuit portion of one phase (one of U phase, V phase, and W phase) of the bridge circuit of the converter device. Figure 4 The illustrated circuit includes a high-voltage side IGBT element 402 arranged on the side of a high-voltage terminal 401 and a low-side IGBT element 404 arranged on the side of a low-voltage terminal 403 . In addition, the semiconductor element used in the semiconductor device of this embodiment is not limited to...
Embodiment 2
[0104] Below, refer to Figure 6 ~ Figure 9 A second embodiment of the semiconductor device of the present invention will be described.
[0105] Like the first embodiment, the semiconductor device of the second embodiment is an electric power semiconductor device, typically a converter device for driving a driving three-phase motor of an electric vehicle. Figure 6 is the same as above figure 1 same graph.
[0106] For the structure of the circuit of the IGBT module of the second embodiment, there is Figure 4 structure as described.
[0107] That is, in the circuit portion of one phase (one of the U phase, V phase, and W phase) of the bridge circuit of the converter device, the high-voltage side IGBT element 402 disposed on the high-voltage terminal 401 side and the high-voltage side IGBT element 402 disposed on the low-voltage terminal side are included. The low side IGBT element 404 on the 403 side. The bridge circuit of the converter device is composed of six power se...
Embodiment 3
[0142] refer to Figure 11 ~ Figure 13 , an example of the basic structure of the semiconductor device according to the third embodiment of the present invention will be described. The semiconductor device of the third embodiment is also used in a converter device for driving a driving three-phase motor of an electric vehicle, as in the above-mentioned embodiments.
[0143] refer to Figure 11 ~ Figure 13 Describe the physical structure of the IGBT module.
[0144] exist Figure 11 and Figure 12 In , the block part 211 indicated by the two-dot chain line shows the appearance shape of the package forming the IGBT module 212 . The block member 211 is actually a molded part made of resin. Figure 11 The portion indicated by the solid line in the center is a physical structural portion of the wiring board. In addition, resin molding 211 in Figure 11 and Figure 12 represented by imaginary lines in Figure 13 is represented by a solid line.
[0145] exist Figure 11 Amon...
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