Double exchange bias field type spinning valve

A bias field and double-exchange technology, which is applied in spin-exchange-coupled multilayer films, measuring devices, and magnetic field-controlled resistors, can solve the problem of degraded giant magnetoresistance performance, spin-valve multilayer interlayer interactions, etc. Diffusion and other issues, to achieve good film stability and giant magnetoresistance performance, improve stability, and widen the effect of high resistance area

Inactive Publication Date: 2009-07-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

When using the deposition method under a magnetic field, the obtained exchange bias field is small; while when using the annealing method under a magnetic field, although a larger exchange bias field can be obtain...

Method used

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  • Double exchange bias field type spinning valve
  • Double exchange bias field type spinning valve
  • Double exchange bias field type spinning valve

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Embodiment Construction

[0018] Preparation of Ta(10nm) / FeMn(15nm) / NiFe(6nm) / Cu(4nm) / NiFe(12nm) / FeMn(15nm) / Ta(5nm) on Si substrate by computer-controlled four-target magnetron sputtering equipment Double exchange bias field spin valve. A pair of permanent magnets are used to provide a 300Oe deposition magnetic field along the film surface during deposition. After the Ta(10nm) / FeMn(15nm) / NiFe(6nm) / Cu(4nm) multilayer film is deposited, the permanent magnet The axis of the surface is rotated 180 degrees, so that the direction of the magnetic field is antiparallel to the direction of the magnetic field during the initial deposition, and the NiFe(12nm) / FeMn(15nm) / Ta(5nm) multilayer film is sputtered, and the double exchange bias field spin is finally completed. Valve preparation. For comparison, using the same sputtering conditions, a Ta(10nm) / NiFe(6nm) / Cu(4nm) / NiFe(12nm) / FeMn(15nm) / Ta(5nm) top spin valve was prepared with a four-probe The giant magnetoresistance effect of the sample was tested by the me...

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Abstract

The invention belongs to the technical field of magnetic materials and devices and relates to a magnetic recording technology, in particular to an exchange bias field-type spin valve. The invention provides a double exchange bias field-type spin valve, which is composed of a substrate, a buffer layer, an antiferromagnetic layer AFM1, a ferromagnetic layer F1, a separator, a ferromagnetic layer F2, an antiferromagnetic layer AFM2 and a coating layer, wherein an exchange bias field Hex1 is generated between the antiferromagnetic layer AFM1 and the ferromagnetic layer F1 along the membrane surface; and an exchange bias filed Hex2 in the opposite direction to Hex1 is also generated between the antiferromagnetic layer AFM2 and the ferromagnetic layer F2 along the membrane surface. Due to the double exchange bias field, the exchange bias field range of the spin valve can be expanded at room temperature so as to widen the high-resistance region of the spin valve, thereby facilitating the improvement of the stability of the exchange bias field-type spin valve in information storage or other applications. In addition, the double exchange bias field-type spin valve can be fabricated at room temperature without high-temperature annealing, and has the advantages of good membrane stability and high giant magnetoresistance.

Description

technical field [0001] The invention belongs to the technical field of magnetic materials and components, and relates to magnetic recording technology, in particular to an exchange bias field type spin valve. Background technique [0002] The giant magnetoresistance (GMR) effect refers to the resistance change caused by an external magnetic field in a magnetic multilayer film material. It has a wide range of application backgrounds in sensors, magnetic random access memory and so on. The spin valve is currently the most important structure to realize the giant magnetoresistance effect. Due to the low saturation field and high sensitivity of this structure, the sensor and ultra-high density storage technology based on the giant magnetoresistance effect have been developed by leaps and bounds. [0003] The basic structure of the spin valve is: free layer (ferromagnetic layer F1) / isolation layer (nonmagnetic layer) / pinning layer (ferromagnetic layer F2) / bias layer (antiferroma...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01F10/32G11B5/39G01R33/09
Inventor 唐晓莉张怀武苏桦钟智勇荆玉兰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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