Method for generating right-angle structure compensation figure of silicon (10) substrate aeolotropism corrosion
A graphics generation and anisotropy technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problem of lack of compensation graphics generation methods, and achieve the effect of convenient generation and clear theoretical principles.
Inactive Publication Date: 2010-09-08
NANTONG MEIMING CHINLON +1
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[0003] At present, there are very few right-angle compensation patterns on silicon (110) substrates, and they are mainly derived from experimental conclusions. There is a lack of common compensation pattern generation methods, and it is impossible to change the compensation patterns according to specific needs in the design to meet the geometric requirements. structural requirements, and in practice there are many possible shapes for the right-angle compensation graph
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[0021] 1. Topology
[0022] The topological structure of the right-angle compensation pattern proposed by the present invention is composed of five straight lines (hereinafter referred to as the , and crystal orientations on the surface of the silicon (110) substrate. A grid formed by interweaving straight lines of crystal orientations), in which there is one straight line of group crystal orientation, two straight lines of group crystal orientation in different directions, and two group crystal orientations in different directions. 1 straight line each. The topology surrounds the right-angled outer boundary that needs to be compensated, and Figure 2 shows the basic structure. Because the rectangular device structure targeted by the present invention has a pair of straight sides with a crystal orientation, and is a fast-etching crystal orientation, a certain corrosion compensation distance must be reserved. Therefore, in the topology of the compensation pattern The st...
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The invention discloses a method for generating compensation patterns with rectangular structure in anisotropy etching of silicon (110) substrate, which is characterized in that for a target device structure which is manufactured on the silicon (110) substrate and contains a right angle type convex angle that is formed by adopting <110> crystallographic orientation and <100> crystallographic orientation, the generation process of right-angle compensation patterns thereof is realized by two steps of: firstly, establishing the topological structure of the right-angle compensation patterns; and then, generating concrete right-angle compensation patterns according to the generating method of the right-angle compensation patterns. The external contour of all right-angle compensation patterns starts at a straight line b1 (or b2) representing the <110> crystallographic orientation, and the concrete patterns can be generated by one of the following methods. The method has the advantages of clear theoretical principles as well as convenient and flexible concrete compensation generation. Meanwhile, the technical method provided by the invention has specific technical path and is particularly applicable to a computer aided design system.
Description
technical field [0001] The invention provides a compensation pattern generation method for protecting a right-angle form convex structure in anisotropic etching of a silicon (110) substrate, belonging to the technical field of manufacturing-oriented silicon anisotropic etching pattern design. Background technique [0002] The anisotropic etching technology of silicon means that during the etching process of silicon, different crystal planes of silicon have different etching rates, and a variety of microelectromechanical system (MEMS) structures can be fabricated by using the silicon anisotropic etching technology. However, it is precisely because of the anisotropy of the etching process that the obtained structure is often inconsistent with the designed mask, and the typical case is that the convex corners in the device structure are cut. According to the knowledge of semiconductor theory and process, in the silicon anisotropic etching process, some crystal directions on the...
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IPC IPC(8): H01L21/306B81C1/00
Inventor 李伟华张涵
Owner NANTONG MEIMING CHINLON