Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Abstract

Provided are a pattern forming method capable of accurately forming a microscopic pattern without employing a hard mask, thereby simplifying a process in comparison to a conventional process and reducing a manufacturing cost of a semiconductor device, a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus. A pattern forming method for forming a pattern having a predetermined shape and serving as a mask for etching, includes a process for forming a first pattern 106 by patterning a chemically amplified resist containing an acid generator, a process for forming a first pattern 107 having a solvent resistance and a developing solution resistance by bringing the first pattern 106 into contact with a basic solution or a basic gas, and a process for forming a second pattern 108 by patterning a chemically amplified resist containing an acid generator.

Description

technical field [0001] The present invention relates to a patterning method for forming an etching mask used for etching such as plasma etching on a substrate such as a semiconductor wafer, a method for manufacturing a semiconductor device, and a manufacturing device for the semiconductor device. Background technique [0002] Conventionally, in a manufacturing process of a semiconductor device or the like, an etching process such as plasma etching is performed on a substrate such as a semiconductor wafer to form a fine circuit pattern or the like. In such an etching process, a mask is formed by a photolithography process using a photoresist. [0003] In such a photolithography process, various techniques have been developed in order to cope with miniaturization of patterns to be formed. One of them has so-called double patterning. In this double patterning, a hard mask made of amorphous carbon or the like is formed by performing two-stage patterning, that is, a first photo...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that it is necessary to perform a film-forming process of an amorphous carbon layer or the like to be a hard mask and an etching process of the amorphous carbon layer or the like, which complicates the process and increases the manufacturing cost of the semiconductor device.

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