P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
A technology of lateral double diffusion and hot carriers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as incompatibility, and achieve the effects of reducing temperature, charging, and damage
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[0018] Refer to figure 2 , A P-type lateral double-diffusion metal oxide semiconductor tube that reduces the hot carrier effect, comprising: a P-type semiconductor substrate 9, on which an N-type well region 10 is arranged, and an N-type well region 10 is provided on the P-type semiconductor substrate 9 The region 10 is provided with a P-type well region 8 and a P-type doped semiconductor region 11, a P-type source region 6 and an N-type contact region 7 are provided on the P-type well region 8, and a P-type doped semiconductor region 11 is provided There is a P-type drain region 12, a gate oxide layer 3 is provided on the surface of the P-type well region 8, and the gate oxide layer 3 extends from the P-type well region 8 to the N-type well region 10 and the P-type doped semiconductor region 11. The area outside the P-type source region 6, the N-type contact area 7 and the gate oxide layer 3 on the surface of the P-type well region 8 and the area outside the P-type drain region 1...
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