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Translation register for grid driver

A technology of shifting registers and gates, applied in instruments, information storage, static memory, etc., can solve problems such as noise and threshold voltage shift

Inactive Publication Date: 2009-08-26
IND TECH RES INST
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] In view of the above problems, the present invention proposes a translation register for a gate driver, which utilizes a capacitor to store the threshold voltage of the driving transistor, realizes the function of compensating the attenuation of the driving voltage, and solves the problem of noise and threshold voltage offset, which can greatly improve The stability of the driving circuit

Method used

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  • Translation register for grid driver
  • Translation register for grid driver
  • Translation register for grid driver

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Embodiment Construction

[0038] Thin film transistor (TFT) will cause threshold voltage V under long-term gate bias stress th Drift, resulting in a drop in drive current and reduced drive capability. Threshold voltage V th The amount of drift vs. gate voltage V GS , initial threshold voltage V T0 And there is a specific relationship between the action time t of the bias voltage. To reduce V th drift amount, and reaches V th For the purpose of increasing and fixing the driving current, in terms of circuit realization, the present invention uses a storage capacitor to store the threshold voltage of the driving TFT.

[0039] figure 1 A schematic diagram of the gate driver of the present invention is shown. The gate driver is generally a circuit that connects multiple translation registers in series. figure 1The three levels (N-1, N and N+1) are shown as an illustration example. According to this embodiment, each translation register includes an input terminal IN, an output terminal OUT and a res...

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Abstract

The invention discloses a translation register for a grid driver, which comprises a drive transistor, a reset transistor, a charge and discharge circuit, a threshold voltage detection circuit and a storage capacitor. The threshold voltage detection circuit is used for detecting the initial threshold voltage of the drive transistor and storing the initial threshold voltage in the capacitor. The charge and discharge circuit can charge and discharge the capacitor and receive a control signal to start the translation register. The reset transistor can receive an output signal of a translation register of the next stage to discharge the capacitor and to reset the translation register in the initial state. Thus, the drive current output by the translation register is dissociated from the threshold voltage of the drive transistor.

Description

technical field [0001] The invention relates to a gate driver, in particular to a gate driver capable of compensating the threshold voltage of a transistor. Background technique [0002] In recent years, the direction of research and development of thin film transistors (thin film transistor, TFT) has gradually shifted from simple pixel switches to circuit applications. This trend can be understood from the presentations at international seminars. The uniformity and TFT characteristics of TFT have been improving year by year, but because the poor reliability of TFT is a congenital defect, it is urgent to rely on some acquired methods, such as component structure design, circuit compensation design or system adjustment. to make up. On the gate driver, it is necessary to reduce the long-term bias voltage of individual TFTs on the gate terminal, so as to achieve the purpose of outputting a stable scanning voltage. [0003] U.S. Patent 6,064,713 proposes a method of using an a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/20G09G3/36G11C19/28
Inventor 陈鸿钧江可玉贡振邦陈明道
Owner IND TECH RES INST
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