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Esd protection circuits

An overload protection circuit and circuit technology, which is applied in the direction of emergency protection circuit devices, amplifier protection circuit layout, circuits, etc., can solve the problem of reducing the bandwidth of distributed amplifiers, etc.

Active Publication Date: 2013-04-10
RGT UNIV OF CALIFORNIA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when an ESD protection circuit is added to a distributed amplifier, the capacitive loading of the ESD protection circuit may degrade the bandwidth of the distributed amplifier

Method used

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Embodiment Construction

[0043] Each of the additional features and teachings disclosed below can be utilized alone or in combination with the other features and teachings to provide an ESD protection circuit for use as an on-chip voltage overload protection circuit for a power amplifier, for an integrated circuit such as a communication integrated circuit On-chip ESD protection circuit for RF input pins and single-unit protection unit integrated with emulated transmission line of distributed amplifier. Representative examples of the present invention will now be described in more detail with reference to the accompanying drawings, which examples utilize many of these drawing features and teachings, both individually and in combination. This detailed description is intended merely to teach those skilled in the art additional details for practicing preferred aspects of the present teachings, and is not intended to limit the scope of the invention. Therefore, combinations of features and steps disclosed...

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Abstract

Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

Description

technical field [0001] The present disclosure relates to low capacitance loading electrostatic discharge (ESD) protection circuits, and more particularly to ESD protection circuits for use as on-chip voltage overload protection circuits for power amplifiers, for applications such as communication circuits (telecom The on-chip ESD protection circuit of the RF input pin of the integrated circuit of the circuit and the unit protection cell (unit protection cell) integrated with the artificial (artificial) transmission line of the distributed amplifier. Background technique [0002] The collector output of an RF power amplifier is usually connected to an RF inductor (often called an RF choke) and an output impedance matching network. The other side of the output impedance matching network is terminated with a termination such as an antenna. The voltage at the transistor collector output is determined by the Vo = Vs + L ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G2/12
CPCH03F2200/444H01L27/0255H03F3/605H03F1/52H03F2200/93H03F1/22H03F2200/451H01L21/822H01L27/04H02H9/00
Inventor Y·马G·-P·李
Owner RGT UNIV OF CALIFORNIA
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