Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
A technology for light-emitting elements and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., capable of solving problems such as lattice mismatch, and achieving the effects of excellent productivity and excellent luminous characteristics
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Embodiment 1
[0222] In this example, on the c-plane of the substrate 11 made of sapphire, an aggregate of columnar crystals made of AlN was formed as an intermediate layer 12 by RF sputtering, and on this intermediate layer 12, MOCVD was used to form A layer made of an undoped GaN-based semiconductor was used as the base layer 14a, and the sample of Example 1 was obtained.
[0223] First, the substrate 11 made of sapphire, in which only one side is mirror-polished to the extent that it can be used for epitaxial growth, is introduced into a sputtering machine without any pretreatment such as wet processing. Here, as the sputtering device, a device having a high-frequency power supply and a mechanism capable of moving the position of the magnet within the target is used.
[0224] Then, the substrate was heated to 750° C. in the sputtering apparatus, and only nitrogen gas was introduced at a flow rate of 30 sccm. The pressure in the chamber was kept at 0.08 Pa, and a high-frequency bias volta...
Embodiment 2
[0235] In this example, an n-type contact layer 14b containing Ge as a dopant is formed on a 6 μm non-doped GaN crystal (base layer 14a) formed under the same conditions as in Example 1, and further laminated. Each semiconductor layer is finally fabricated as figure 1 The shown epitaxial wafer (stacked semiconductor 10 ) having an epitaxial layer structure for a III-nitride compound semiconductor light-emitting device.
[0236] This epitaxial wafer has a structure in which, on a substrate 11 made of sapphire having a c-plane, an intermediate layer 12 made of AlN having a columnar crystal structure is formed by the same growth method as in Example 1, and then from the side of the substrate 11 A 6 μm base layer 14a formed of undoped GaN, with a thickness of 1×10 19 cm -3 The n-type contact layer 14b formed by Ge-doped GaN with an electron concentration of 2 μm has 1×10 18 cm -3 The electron concentration of 20nm consists of In 0.1 Ga 0.9 N-type cladding layer (n-type cladd...
Embodiment 3～7 and comparative example 2～3
[0249] In Examples 3-7 and Comparative Examples 2-3, except that reverse sputtering in the pretreatment process was the conditions shown in following Table 1, it carried out similarly to Example 2, and produced the semiconductor light-emitting element.
[0250] Table 1 below shows the reverse sputtering conditions in the pretreatment step, the measurement results of the X-ray half-value width, and the emission output.
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