Display device

Abstract

Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer. According to the voltage applied to the grid, when the film transistor is in OFF state, the resistance change element can write in the corresponding data according to the changes of the input end voltage between the low resistance state and the high resistance state.

Description

technical field [0001] The present invention relates to memory elements. More specifically, it relates to a memory element suitable for driving pixels of an active matrix type display device. In addition, it also relates to an active matrix display device in which such a memory element is formed in each pixel. Background technique [0002] An active matrix display device includes row-shaped gate lines, column-shaped data lines, and pixels arranged at their intersections. Active elements such as a photoelectric element represented by a liquid crystal cell and a thin film transistor for driving the photoelectric element are formed in each pixel. The gate of the thin film transistor is connected to the gate line, the source is connected to the data line, and the drain is connected to the photoelectric element. The active matrix display device displays an image corresponding to the image signal on a pixel array by sequentially scanning gate lines and supplying image signals (...

AI Technical Summary

Problems solved by technology

Since there is no need to form circuit elements such as transistors in each pixel, there is no need to worry about reducing the opening area, but there is a lack of materials suitable for ferroelectrics with memory functions, and they have not reached a practical level.

When data is rewritten repeatedly, the ferroelectric properties and insulation tend to change, making it difficult to ensure the reliability of the memory function

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