Voltage non-linear resistor ceramic composition and multilayer varistor using the same

A non-linear resistor, varistor technology, applied in varistor and other directions, can solve the problems of increased current density, insufficient, difficult low voltage sensitive voltage, etc., to achieve excellent ESD resistance, small electrostatic capacitance, low varistor voltage Effect

Active Publication Date: 2013-10-16
PANASONIC CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the current density increases due to the reduction of the electrode area due to the low capacitance, if the varistor voltage is lowered to 100V or less, the characteristic deterioration due to ESD becomes easy to occur
Therefore, if the practical ESD resistance is satisfied, only a high varistor voltage of about 100V can be realized, and it is difficult to realize a low-voltage varistor
Therefore, the ESD absorption characteristics are insufficient, and the ESD countermeasures of the equipment are likely to become insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage non-linear resistor ceramic composition and multilayer varistor using the same
  • Voltage non-linear resistor ceramic composition and multilayer varistor using the same
  • Voltage non-linear resistor ceramic composition and multilayer varistor using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0011] The voltage non-linear resistor composition in Embodiment 1 of the present invention contains ZnO as a main component and contains [Sr 1-y m y ] 1-a co 1+a o 3 Indicated perovskite composition. M is at least one of Ca and Ba, x, y, and a represent molar ratios, and 0.0005≤x≤0.10, 0≤y≤0.8, and -0.1≤a≤0.2. That is, the voltage non-linear resistor composition in this embodiment is represented by the general formula (1-x)ZnO+x[Sr 1 -y m y ] 1-a [Co 1-z A z ] 1+a o 3 indicated composition.

[0012] The voltage varistor composition in this embodiment will be described in detail below based on specific examples. First, ZnO as the main component and SrCO as the subcomponent are prepared as starting materials. 3 、Co 2 o 3 , CaCO 3 、BaCO 3 , and then Al as the second subcomponent 2 o 3 chemically high-purity powder. Next, the starting materials are weighed so that the composition after sintering is given by the general formula (1-x)ZnO+x[Sr 1-y m y ] 1-a c...

Embodiment approach 2

[0049] The voltage non-linear resistance composition in Embodiment 2 of the present invention has ZnO as a main component and contains [Sr 1-y m y ] 1-a [Co 1-z mn z ] 1+a o 3 Indicated perovskite composition. M is at least one of Ca and Ba, x, y, z and a represent molar ratios, 0.0005≤x≤0.10, 0≤y≤0.8, 01-y m y ] 1-a [Co 1-z mn z ] 1+a o 3 indicated composition. That is, the voltage varistor composition in the present embodiment contains a perovskite component obtained by substituting a part of Co with Mn in the first embodiment.

[0050] The voltage varistor composition of the present embodiment will be described in detail below based on specific examples. First, ZnO as the main component and SrCO as the subcomponent are prepared as starting materials. 3 、Co 2 o 3 , CaCO 3 、BaCO 3 , and then Al as the second subcomponent 2 o 3 chemically high-purity powder. In addition, prepare MnO 2 high-purity powder. Next, except that the composition after sintering ...

Embodiment approach 3

[0076] The voltage non-linear resistance composition in Embodiment 3 of the present invention contains ZnO as a main component and contains [Sr 1-y m y ] 1-a [Co 1-z Cr z ] 1+a o 3 Indicated perovskite composition. M is at least one of Ca and Ba, x, y, z and a represent molar ratios, 0.0005≤x≤0.10, 0≤y≤0.8, 01-y m y ] 1-a [Co 1-z Cr z ] 1+a o 3 indicated composition. That is, the voltage varistor composition in this embodiment contains a perovskite component obtained by substituting a part of Co with Cr in Embodiment 1. FIG.

[0077] The voltage varistor composition of the present embodiment will be described in detail below based on specific examples. First, ZnO as the main component and SrCO as the subcomponent are prepared as starting materials. 3 、Co 2 o 3 , CaCO 3 、BaCO 3, and then Al as the second subcomponent 2 o 3 chemically high-purity powder. In addition, Cr 2 o 3 high-purity powder. Next, except that the composition after sintering becomes (1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a voltage non-linear resistor ceramic composition has ZnO as a main component and is represented by the general formula (1-x)ZnO+x[Sr[1-y]M[y]][1-a][Co[1-z]A[z]][1+a]O[3]. Here, M is at least one of Ca and Ba, and A is Mn or Cr. x, y, z and a indicate molar ratios, and 0.0005<=x<=0.10, 0<=y<=0.8, 0<=z<=0.8, and -0.1<=a<=0.2 are satisfied.

Description

technical field [0001] The present invention relates to a voltage non-linear resistor composition used in a varistor suitable for protecting electronic equipment from static electricity, and a laminated varistor using the same. Background technique [0002] Semiconductor devices such as ICs used in electronic equipment may be destroyed by static electricity (ESD) or their characteristics may deteriorate. The destruction of semiconductor devices caused by ESD can cause serious obstacles such as malfunction or failure of electronic equipment. In particular, recent semiconductor devices are becoming more vulnerable to ESD as the speed of their operation increases. Therefore, the importance of ESD countermeasures in various electronic devices has increased year by year in recent years. ZnO-based varistors, which are voltage non-linear resistors, are widely used as components for this countermeasure. [0003] The best varistors used in ESD countermeasures have excellent ESD ab...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/10C04B35/453
Inventor 古贺英一沢田典子
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap