Method for applying continuously adjustable uniaxial stress to semiconductor samples at low temperature

Abstract

The invention provides a method for applying continuously adjustable uniaxial stress to semiconductor samples at a low temperature. The method comprises the following steps: choosing a piezoelectric ceramic actuator which can regulate applied stress by changing the bias voltage of piezoelectric ceramics; fixing two U-shaped red-copper blocks used at two ends of the piezoelectric ceramic actuator to fix samples and conduct heat; connecting a red-copper heat-conducting wire with one red-copper block to conduct heat uniformly and rapidly; using super glue to bond two ends of a semiconductor sample to the two U-shaped copper blocks; and changing the bias voltage of the piezoelectric ceramics on the piezoelectric ceramic actuator so as to apply continuously adjustable uniaxial stress to the semiconductor sample. The method has the advantages that the magnitude of uniaxial stress is continuously adjustable in double directions and can be measured; the sample is rapid and accurate in temperature reduction; and a device is small in occupied volume and easy to operate and can be perfectly combined with a low-temperature device.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer measurement. In particular, devices and methods for applying continuously adjustable uniaxial stress to semiconductor samples at low temperatures. Background technique [0002] The internal stress of semiconductors has a significant impact on the properties of the corresponding devices and structures. A large number of growth and processing processes are focused on how to eliminate or control the stress inside the substrate. Stress can have dramatic effects on the optical, electrical, magnetic, and a host of other properties of semiconductor materials. In the field of semiconductor detection technology, only when quantitative and measurable uniaxial stress can be applied to the sample can the relevant properties of semiconductor materials be accurately determined. In recent years, with the rise of superconductivity and a series of high-tech technologies, the precise application and ...

AI Technical Summary

Problems solved by technology

Although this method has very small requirements for the volume of the mechanical device, its limitations are obvious: the magnitude of the stress is dependent on the magnitude of the temperature, as well as the thermal expansion coefficient of the material itself, and the controllable degrees of freedom are very large. Small

Moreover, the sample cannot be recovered after the measurement is completed.

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