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Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program

A technology of heat treatment device and adjustment method, which is applied in the direction of temperature control, control/regulation system, non-electric variable control, etc., and can solve the problems that it is difficult to ensure the uniformity of film thickness, and does not have

Active Publication Date: 2012-12-05
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As mentioned above, in the film formation process, it is difficult for an operator who does not have knowledge and experience related to heat treatment equipment and processes to ensure the uniformity of the film thickness of the thin film formed on the semiconductor wafer.

Method used

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  • Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program
  • Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program
  • Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program

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no. 1 approach

[0048] Below, to use figure 1 The shown batch-type vertical heat treatment device is taken as an example to illustrate the heat treatment device, the temperature adjustment method and the program of the heat treatment device according to the present invention. In addition, in this embodiment, dichlorosilane (SiH 2 Cl 2 ) and nitrous oxide (N 2 O) Formation of SiO on a semiconductor wafer 2 The case of a membrane is used as an example to illustrate the invention.

[0049] Such as figure 1 As shown, the heat treatment apparatus 1 of the present embodiment includes a substantially cylindrical reaction tube (processing chamber) 2 having a ceiling. The reaction tube 2 is disposed so as to face the vertical direction in its longitudinal direction. The reaction tube 2 is formed of a highly heat-resistant and corrosion-resistant material such as quartz.

[0050] On the lower side of the reaction tube 2, a substantially cylindrical manifold 3 is provided. Manifold 3, the upper ...

no. 2 approach

[0103] Hereinafter, the temperature adjustment method and program of the heat treatment device and heat treatment device of the present invention are applicable to Figure 13 The present embodiment will be described by taking a case where a batch-type vertical heat treatment apparatus is used as shown as an example. In addition, in this embodiment, dichlorosilane (SiH 2 Cl 2 ) and nitrous oxide (N 2 O) to form SiO on semiconductor wafers 2 A film is used as an example to illustrate the invention.

[0104] Such as Figure 13 As shown, the heat treatment apparatus 1 of the present embodiment includes a substantially cylindrical reaction tube (processing chamber) 2 having a ceiling. The reaction tube 2 is disposed so as to face the vertical direction in its longitudinal direction. The reaction tube 2 is formed of a highly heat-resistant and corrosion-resistant material such as quartz.

[0105] On the lower side of the reaction tube 2, a substantially cylindrical manifold 3...

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Abstract

There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in-plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.

Description

technical field [0001] The present invention relates to a heat treatment apparatus for heat-treating an object to be processed such as a semiconductor wafer, and a temperature adjustment method and program for the heat treatment apparatus. Background technique [0002] In the manufacturing process of a semiconductor device, a heat treatment apparatus that performs film formation processing of an object to be processed, such as a semiconductor wafer, can be used. In this heat treatment apparatus, for example, a plan in which processing conditions such as processing temperature, processing pressure, and gas flow rate are written is prepared corresponding to the type and thickness of the thin film to be formed, and by selecting this plan, based on the predetermined processing conditions for heat treatment. [0003] However, even if heat treatment based on the above processing conditions is performed, the film-forming gas may not become sufficiently active because the temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/324H01L21/20G05D23/00
Inventor 竹永裕一王文凌山口达也上西雅彦
Owner TOKYO ELECTRON LTD