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A device for realizing linear capacity in a filter provided with a transient suppression diode and a method

A transient suppression and filter technology, applied in the field of filter circuits, can solve problems such as unreliable filter performance and changes in filter cut-off frequency

Active Publication Date: 2011-01-19
重庆万国半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the capacitance may change with the bias voltage, and this will cause the cutoff frequency of the filter to change with the DC bias voltage, resulting in unreliable filter performance

Method used

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  • A device for realizing linear capacity in a filter provided with a transient suppression diode and a method
  • A device for realizing linear capacity in a filter provided with a transient suppression diode and a method
  • A device for realizing linear capacity in a filter provided with a transient suppression diode and a method

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Embodiment Construction

[0023] figure 2 Shown is a symmetrical EMI filter combined with a TVS in the present invention. The symmetric EMI filter combined with TVS is supported by N+ substrate 110 with an N epitaxial layer 115, showing both the input side on the left and the output side on the right. The input side of the substrate is doped with a P-type dopant into a first body region 120-1 and a second body region 120-2. A Zener diode 122 - 1 is formed between the first doped body region 120 - 1 and the N epitaxial layer 115 . Another Zener diode 122 - 2 is formed between the second doped body region 120 - 2 and the N epitaxial layer 115 . The formed first body region 120-1 has a first connection doped region 125-1 and a second connection doped region 125-2 for electrically connecting the electrodes 130-1 and 130-2 to receive an input voltage therein. The first body region also has a plurality of shallow trenches 135-1, 135-2 and 135-3 filled with insulating materials and polysilicon gates, acti...

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Abstract

The invention discloses a transient suppression diode (TVS) circuit provided with unidirectional modularized and symmetrical modularized capability, which is integrated with an electro-magnetic interruption (EMI) filter arranged on a semi-conductor substrate provided with a first conductive form. The TVS circuit with integrated EMI filter also comprises a ground terminal for being applied to the symmetrical module structure and arranged on the surface, and a ground terminal for being applied to the unidirectional module structure and arranged on the bottom of the substrate of the semi-conductor; the input and output ends are arranged on the surface of the top; at least one stabilized voltage diode and a plurality of capacities are arranged on the substrate of the semi-conductor, which areapplied to directly coupling the capacity of the ground terminal with the output end and the output end, without a need of floating area interruption.

Description

technical field [0001] The present invention generally relates to circuit configurations and methods of manufacture of filter circuits with inductors including transient suppressor diodes (TVS). More particularly, the present invention relates to an optimized circuit structure and manufacturing method provided with a resistance-capacitance (RC) or inductance-capacitance (LC) filter circuit with increased capacitance for symmetrical bidirectional modularization including The Zener diode and the Zener diode trigger the transient suppressor diode (TVS) of the bipolar transistor. Background technique [0002] The prior art methods of designing and manufacturing filter circuits with resistor-capacitor (RC) or inductor-capacitor (LC) face the challenge of adding capacitance to achieve a certain filtering effect. In order to achieve the purpose of increasing the capacitance, a typical practice of those skilled in the art is to increase the connection area. However, since the devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H03H7/01H03H7/06
Inventor 何佩天马督儿·博德张复兴翁丽敏
Owner 重庆万国半导体科技有限公司
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