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Multisection silicon-based film solar cell structure and process thereof

A technology of solar cells and silicon-based thin films, applied in circuits, electrical components, photovoltaic power generation, etc., to achieve the effect of improving the absorption range and increasing the photoelectric conversion efficiency

Inactive Publication Date: 2009-10-28
CONTREL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has been no silicon-based thin-film solar cell with multiple energy gaps fabricated in multiple P-I-N structures in the past.

Method used

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  • Multisection silicon-based film solar cell structure and process thereof
  • Multisection silicon-based film solar cell structure and process thereof
  • Multisection silicon-based film solar cell structure and process thereof

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Embodiment Construction

[0035] Although the present invention may be embodied in different forms, the drawings and the description below are preferred embodiments of the present invention, and please understand that the disclosure herein is considered to be an example of the present invention and is not intended to represent the present invention. The invention is limited to the drawings and / or the specific embodiments described.

[0036] Please refer to figure 1, which shows a side cross-sectional view of a silicon-based thin-film solar cell 100 with a multi-junction structure according to the present invention. The silicon-based thin-film solar cell 100 with a multi-junction structure comprises a substrate 110; a transparent conductive film 120; a first photoelectric conversion layer 130; a second photoelectric conversion layer 140; a third photoelectric conversion layer 150 and an electrode 160 . One side of the substrate 110 is a light-emitting surface, and a transparent conductive film 120 is ...

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Abstract

The invention relates to a multisection silicon-based film solar cell structure and a process thereof. The multisection silicon-based film solar cell structure mainly comprises a base plate, a transparent conductive film, a first photoelectric conversion layer, a second photoelectric conversion layer, a third photoelectric conversion layer and an electrode, wherein the energy gap of the first photoelectric conversion layer is larger than that of the second photoelectric conversion layer, the energy gap of the second photoelectric conversion layer is larger than that of the third photoelectric conversion layer, and an embedded type crystal structure is arranged in the second photoelectric conversion layer. The arrangement mode of the energy gap can be used for improving the absorption range of optical wavelengths and increasing the photoelectric conversion efficiency of the solar cell.

Description

technical field [0001] The invention relates to a silicon-based thin-film solar cell structure and its technology, and in particular to a silicon-based thin-film solar cell structure with a multi-junction structure and its technology. Background technique [0002] At present, due to the international energy shortage, countries around the world have been continuously researching and developing various feasible alternative energy sources, and among them, solar cells that generate electricity from solar energy have attracted the most attention. Solar cells are easy to use, inexhaustible, inexhaustible, and waste-free. Objects, no pollution, no rotating parts, no noise, can block radiant heat, long service life, size can be changed at will, and it can be combined with buildings and popularized, so solar cells are used as energy sources. [0003] In the 1970s, silicon solar cells first developed by Bell Laboratories in the United States gradually developed. With the development ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/20H01L31/0352H01L31/036H01L31/076
CPCY02E10/50Y02E10/548Y02P70/50
Inventor 简永杰杨茹媛张育绮
Owner CONTREL TECH CO LTD
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