Semiconductor device and method for manufacturing the same

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、晶体管等方向，能够解决产生凸起状特性等问题，达到降低凸起状特性、实现功耗的效果

Inactive Publication Date: 2009-10-28
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, if Figure 13 As shown, when an inclined portion is formed in the semiconductor layer of an n-type TFT, there is a problem that a bump-like characteristic occurs in the sub-threshold region of the current-voltage characteristic (for example, refer to Patent Document 1, etc.)

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

Experimental program
Comparison scheme
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Embodiment approach 1

[0054] Figure 1 to Figure 12 Embodiment 1 of this invention is shown.

[0055] Figure 9 It is a plan view showing main parts of the semiconductor device 1 of the first embodiment. figure 1 Yes Figure 9 I-I line sectional view. Figure 2 to Figure 8 It is a sectional view showing each manufacturing process of the semiconductor device 1 . Figure 10 It is a graph showing the current-voltage characteristic of the semiconductor device 1 . Figure 11 is a cross-sectional view showing a schematic configuration of the liquid crystal display device S. FIG. Figure 12 It is a cross-sectional view schematically showing a first semiconductor layer 17 and a second semiconductor layer 18 which will be described later.

[0056] The semiconductor device 1 of this embodiment constitutes the active matrix substrate 10 of the liquid crystal display device S, for example. First, the schematic configuration of the liquid crystal display device S will be described.

[0057] like Figu...

Embodiment approach

[0129] In Embodiment 1 above, the semiconductor device 1 was used as an example to describe the active matrix substrate 10 constituting the liquid crystal display device S and on which the drive circuit 5 is formed. Active matrix substrates for other display devices such as devices. In addition, any semiconductor device including p-type TFTs and n-type TFTs can be similarly applied.

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Abstract

A semiconductor device includes a p-type TFT having a first semiconductor layer, and an n-type TFT having a second semiconductor layer. A tilted portion, which is widened toward the insulating substrate side, is formed in at least a part of an outer edge portion of the first semiconductor layer. A tilt angle of a surface of the tilted portion to a surface of an insulating substrate, which is an angle formed inside the first semiconductor layer, is smaller than an angle of a side surface of an outer edge portion of the second semiconductor layer to the surface of the insulating substrate, which is an angle formed inside the second semiconductor layer.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. Background technique [0002] In recent years, so-called thin display devices such as liquid crystal display devices have been widely used in mobile devices such as mobile phones and various devices such as television monitors. Here, an active matrix type liquid crystal display device is described as an example. The liquid crystal display device includes an active matrix substrate, a counter substrate provided to face the active matrix substrate, and a liquid crystal layer sealed between these substrates. [0003] A common electrode, a color filter, and the like are formed in the counter substrate. On the other hand, the active matrix substrate has a plurality of pixels arranged in a matrix, and a thin film transistor (hereinafter abbreviated as TFT) as a switching element is formed in each pixel. Then, drive control is performed on each TFT, and a drive voltage is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L27/08H01L21/8238H01L27/092
CPCH01L27/1214H01L29/0657H01L27/12H01L27/1222
Inventor 森胁弘幸
Owner SHARP KK
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