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Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as shortened service life and reduced reliability

Inactive Publication Date: 2009-11-25
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even when the solder member contains about 5% by weight of Sb that is relatively resistant to thermal deterioration, there are problems of shortened service life indicated by the number of cooling and heating cycles and reduced reliability.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0020] Various embodiments of the present invention will be described below with reference to the accompanying drawings. Incidentally, the technical scope of the present invention is not limited to these Examples. In the drawings, the same or similar reference numerals designate the same or similar parts.

[0021] First, a first embodiment of the present invention will be described.

[0022] figure 1 is a sectional view showing an important part of the semiconductor device according to the first embodiment.

[0023] like figure 1 As shown, semiconductor device 10 includes semiconductor element 11 , insulating substrate 12 having a main surface on which semiconductor element 11 is mounted, and heat sink 13 bonded to the surface of insulating substrate 12 opposite to the main surface.

[0024] Front electrodes and rear electrodes (both not shown) each made of a metal film are provided on opposite sides of the semiconductor element 11, respectively. The rear electrode of the...

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Abstract

A semiconductor device includes an insulating substrate; at least one semiconductor element mounted on a first principal surface of the insulating substrate; and a heat radiator joined through a solder member to a second principal surface of the insulating substrate opposite to the first principal surface on which the semiconductor element is mounted. The solder member contains at least tin and antimony, and the antimony content of the solder member is in a range of from 7% by weight to 15% by weight, both inclusively. Thus, reliability of the semiconductor device is improved.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device configured such that an insulating substrate having a semiconductor element mounted thereon is bonded to a heat sink. Background technique [0002] Power semiconductor modules that can operate in a large current and high voltage environment have been used in various fields such as general industrial use and in-vehicle use in recent years. The power semiconductor module employs semiconductor devices such as IGBT (Insulated Gate Bipolar Transistor), Power MOS (Metal Oxide Semiconductor), and FWD (Freewheel Diode). [0003] For example, a semiconductor device has a semiconductor element mounted on a ceramic insulating substrate. When a semiconductor device is operated, the semiconductor device generates heat. The insulating substrate of the semiconductor device is bonded to a metal heat sink such as a heat sink by a solder member. Heat generated by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/40H01L23/14
CPCH01L2924/0002H05K3/0061H01L23/24H01L23/473H01L2224/48091H01L2924/19107H01L23/3735H01L2224/73265H05K3/341H05K3/3463H05K1/0306H01L2924/13055H01L2924/1305H01L2924/181H01L2924/00014H01L2924/00H01L2924/00012
Inventor 両角朗
Owner FUJI ELECTRIC CO LTD