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Dithienothiophene dicarboxylic acid monomolecular layer and preparing method thereof

A technology of thiophene dicarboxylic acid mono- and thiophene dicarboxylic acid, which is applied in the field of trithiophene dicarboxylic acid monomolecular layer and preparation thereof, can solve the problems of complex operation, uncontrollable structure, unfavorable material deviceization and the like, and achieves simple operation. Effect

Inactive Publication Date: 2012-03-14
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the past, organic molecular thin film structures prepared by various assembly techniques had the characteristics of complex operation and uncontrollable structure, which was not conducive to the deviceization of such materials.

Method used

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  • Dithienothiophene dicarboxylic acid monomolecular layer and preparing method thereof
  • Dithienothiophene dicarboxylic acid monomolecular layer and preparing method thereof
  • Dithienothiophene dicarboxylic acid monomolecular layer and preparing method thereof

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Effect test

Embodiment 1

[0023] Weigh 0.00284g of dithiophene[2,3-b:3',2'-d]thiophene dicarboxylic acid and dissolve it into 10ml of dimethyl sulfoxide solution, and prepare 10 -3 mol·L -1 The solution. Shake well in an airtight container to fully dissolve. The solution was gradually diluted to make 10 -6 mol·L -1 The solution was put into a 10ml brown volumetric flask to fully dissolve it evenly. Then, the solution was dropped onto the newly cleaved mica substrate using a microsyringe. Keep it in a closed and dry environment with a temperature of 20 ° C for 48 hours to dry naturally. Measured using the DFM mode of an atomic force microscope. The monolayer structure of dithiophene[2,3-b:3′,2′-d]dithiophene dicarboxylic acid can be obtained as “flat-bed”, see figure 1 .

Embodiment 2

[0025] Weigh 0.00284g of dithiophene[3,2-b:2',3'-d]thiophene dicarboxylic acid and dissolve it into 10ml of dimethyl sulfoxide solution to prepare 10 -3 mol·L -1 The solution. Shake well in an airtight container to fully dissolve. Dilute the solution to make 10 -6 mol·L -1 Put it into a 10ml brown volumetric flask and dissolve it evenly. Then, use a microsyringe to bring the concentration to 10 -6 mol·L -1 The solution was dropped onto the newly cleaved mica substrate. Keep it in a closed and dry environment with a temperature of 25°C for 40h to dry naturally. Measured using the DFM mode of an atomic force microscope. Monolayer structures that can be aligned on the substrate surface in an angular orientation, see figure 2 .

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Abstract

The present invention belongs to the field of organic photoelectronic device, and particularly to a dithienthiophene dicarboxylic acid monomolecular layer and a preparing method thereof. A solution which is obtained by dissolving the dithienthiophene dicarboxylic acid into the dimethyl sulfoxide and has a dithienthiophene dicarboxylic acid concentration of 10<-6> mol*L<-1> is prepared and is then dropped on a newly splitted mica substrate. After the mica substrate dropped with the solution is dried in a hermetic environment, the dithienthiophene dicarboxylic acid monomolecular layer is obtained. The preparing method of the invention firstly prepares out the dithienthiophene dicarboxylic acid monomolecular layer. Furthermore the operation of the preparing method of the monomolecular layer is simple and convenient. The unitization of the two components in the organic photoelectronic device is facilitated.

Description

(1) Technical field [0001] The invention belongs to the field of organic optoelectronic devices, in particular to a monomolecular layer of trithiophene dicarboxylic acid and a preparation method thereof. (2) Background technology [0002] With the development of micromachining technology and nanotechnology, conventional devices have gradually reached their classical physical limits, and it is urgent for people to study the physical and chemical properties at the nano / molecular scale. Molecular electronic devices are produced in response to this demand. Unprecedented new requirements have also been placed on the means and techniques for measuring micro-area performance. The development of nanotechnology provides the possibility for a breakthrough in this area. Since the late 1980s, the application of Scanning Probe Microscopy (SPM) has greatly improved the study of solid surface structure, and provided a powerful experimental method for the study of material surface interfac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/56H01L51/54H01L51/40H01L51/30H01L51/48H01L51/46C07D495/14C09K11/06H10K99/00
CPCY02E10/50Y02E10/549
Inventor 杜祖亮王德坤蒋晓红王华
Owner HENAN UNIVERSITY
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