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Capacitor structure and metal layer layout thereof

A capacitor structure and metal layer technology, applied in capacitors, circuits, electrical components, etc., can solve the problems of small capacitance value per unit of interdigitated capacitor structure and limited connection layout positions, and achieve the effect of optimal electrical performance.

Inactive Publication Date: 2009-12-02
MEDIATEK INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0008] Although the '542 patent has a multi-metal interdigitated capacitor structure, the electrical connection between a part of the odd-numbered layer electrode and the same electrode in the even-numbered layer is formed by a via plug, but the layout position of the via plug Restricted to the edges of the electrodes, this situation results in a lower unit capacitance for the '542 patented interdigitated capacitor structure

Method used

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  • Capacitor structure and metal layer layout thereof
  • Capacitor structure and metal layer layout thereof
  • Capacitor structure and metal layer layout thereof

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Embodiment Construction

[0022] Certain terms are used throughout the specification and following claims to refer to particular components. Those of ordinary skill in the art will appreciate that manufacturers may refer to the same component by different terms. This specification and subsequent patent applications do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. "Includes" and "comprising" mentioned throughout the specification and subsequent claims are open-ended terms, so they should be interpreted as "including but not limited to". In addition, the term "coupled" here includes any direct and indirect electrical connection means. Indirect means of electrical connection include connection through other means. In addition, the terms "framestrip", "strip" and the like used in the present invention may be in any elongated, elongated or elongated shape.

[0023] Please also refer to image 3 and ...

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Abstract

The invention relates to a capacitor structure and a metal layer layout thereof. The capacitor structure includes: a first metal layer including: a first frame structure including a first main frame and at least a first frame strip coupled to the first main frame for separating the first main frame to a plurality of first frame sections; and a plurality of first strips, each of the plurality of first strips positioned and isolated in one of the plurality of first frame sections; a second metal layer including: a second frame structure including a second main frame and at least a second frame strip coupled to the second main frame for separating the second main frame to a plurality of second frame sections; and a plurality of second strips, each of the plurality of second strips positioned and isolated in one of the plurality of second frame sections; and a dielectric layer, formed between the first metal layer and the second metal layer.

Description

technical field [0001] The present invention relates to capacitor structures and metal layer layouts thereof. Background technique [0002] Capacitors are critical components of today's integrated circuit devices. Large value capacitors are useful in analog circuits or radio frequency (RF) circuits such as those designed for filtering or signal processing. Due to the increasing trend of integration, it is necessary to integrate large-value capacitors on integrated circuit devices, and different types of integrated capacitors have been designed. For example, Metal-Oxide-Metal (MOM) capacitors are gaining popularity as high-quality capacitors due to their minimal capacitive losses on the substrate. [0003] Some documents (such as US patents US4409608, US5208725, US5583359, US5939766, US6297524, US6383858, US6410954, US6600209, US6819542, etc.) have provided and discussed some applications of interdigitated metal capacitors, and their patent numbers are listed here for refer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/92H01L23/52H01L23/48
CPCH01L23/5223H01L28/60H01L2924/0002H01L2924/00
Inventor 邱致荣陈文淋
Owner MEDIATEK INC
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