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High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment

A light-emitting diode, planar technology, applied in the direction of semiconductor devices, electrical components, circuits, etc.

Inactive Publication Date: 2014-11-26
RGT UNIV OF CALIFORNIA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is possible to produce a rough surface by dry etching, but requires additional processing, such as photolithography, so it is not possible to produce a good cone-like surface on GaN by dry etching

Method used

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  • High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment
  • High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment
  • High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment

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Embodiment Construction

[0034] In the following description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and which show by way of illustration one particular embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.

[0035] overview

[0036] The present invention provides a device that improves extraction efficiency by roughening the surface of a GaN-based LED. Specifically, application of an anisotropic PEC etching method to an N-face c-plane GaN surface results in the formation of tapered surface features. This roughened surface reduces the recurring light reflections inside the LED and thus extracts more light outside the LED. Also, compared to other surface roughening methods that may compromise the quality of the material, the method of the present invention is simple, repeatable and shou...

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Abstract

The invention discloses a (B,Al,Ga,In)N group light-emitting diode (LED). Light is extracted through a nitrogen surface (N surface) (42) of the LED; and the surface of the N surface is roughened into one or more hexagon conical surfaces. The roughened surface reduces the repeat occurrence of light reflection in the LED, so that more lights are extracted from the outer part of the LED. The surface of the N surface is roughened by anisotropic etching, and the etching comprises dry etching or photoinduced chemistry (PEC) etching.

Description

[0001] This application is a divisional application of the Chinese patent application 200380110945.9 filed on December 9, 2003, entitled: "High Efficiency (B, Al, Ga, In) N-based Light Emitting Diode with Surface Roughening". technical field [0002] The invention relates to a light-emitting diode, and in particular to a roughened (B, Al, Ga, In) N-based high-efficiency light-emitting diode. Background technique [0003] (NOTE: This application refers to a number of different publications, which are identified throughout this specification by one or more reference numbers. These various publications, listed in order of these reference numbers, may be listed below under the heading "References" found in the section. Each of these publications is incorporated by reference in this specification.) [0004] Gallium nitride (GaN)-based wide-bandgap semiconductor light-emitting diodes (LEDs) have been in use for about a decade. With the realization of full-color LED displays, LED ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor T·藤井Y·高E·L·胡S·中村
Owner RGT UNIV OF CALIFORNIA