Vacuum treatment device

Abstract

The invention provides a vacuum processing apparatus. When a cover covering a top opening of a container body is taken out of a processing container by a processed body, quantities of moisture and grains mixed in the container can be decreased. The vacuum processing apparatus comprises the container body (21) having a loading table (3) of a substrate (S) as the processed body and the cover (22) covering the top opening of the container body (21). When a gap is formed between the cover (22) and the container body (21) in order that the substrate (S) is taken in or out of the processing container (20). A lid part (5) is arranged along an outer periphery of the processing container (20) so as to cover the gap in a region of taking in or taking out of the substrate (S).

Description

technical field [0001] The present invention relates to, for example, a vacuum processing apparatus for performing plasma processing such as ashing processing on an object to be processed. Background technique [0002] For example, in the manufacturing process of semiconductor substrates such as glass substrates and semiconductor wafers, there is a step of ashing the substrate. if according to Figure 18 Briefly explaining an example of an ashing device for performing this step, 1 in the figure is a vacuum chamber having a loading and unloading port 10 for a substrate on its side, and the loading and unloading port 10 is configured to be freely openable and closed by a gate valve 11 . Inside the vacuum chamber 1 is provided a mounting table 12 serving as a lower electrode for mounting a substrate such as a glass substrate S, and a processing gas supply unit 13 serving as an upper electrode is provided facing the mounting table 12 . Furthermore, the processing gas is supplie...

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Problems solved by technology

[0006] However, this structure of opening the lid 1B to transfer the substrate S has the following problem: when transferring the substrate S, since the side wall of the vacuum chamber 1 is opened along the entire circumference, it is different from the conventional loading and unloading port with the side wall partially opened. 10 is much larger than the opening area, so moisture in the atmosphere can easily enter the chamber 1 when transferring the substrate S

Can produce following problem here: if there is moisture to enter inside chamber 1, then when chamber 1 interior is set to vacuum atmosphere, there will be water vapor floating in processing atmosphere, just exist hydrogen in processing atmosphere, and this hydrogen will The ashing rate becomes high; or the amount of moisture entering the chamber 1 is different when loading and unloading the substrate S, so there will be deviations in the process

In addition, due to the opening of the lid 1B, particles may be mixed into the chamber 1, or conversely, the film adhering to the chamber 1 may be scattered to the outside of the chamber.

[0007] Both Patent Document 1 and Patent Document 2 describe the method of opening the lid to carry the substrate into and out of the chamber, but neither discloses a technology for reducing the amount of water and particles mixed in when the lid is opened in that structure, so Does not solve the technical problem of the present invention

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