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Apparatus and method for manufacturing silicon substrate, and silicon substrate

A technology for manufacturing devices and manufacturing methods, applied in the direction of final product manufacturing, chemical instruments and methods, sustainable manufacturing/processing, etc., to promote rapid development, save resources, promote large-scale industrialization, and strengthen competitiveness. Effect

Inactive Publication Date: 2009-12-30
小岛 弦 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0023] The inventors of the present invention, based on the recognition of the above-mentioned problems of the prior art, aim to solve these problems, and provide a flat large-area polycrystalline thin plate that can efficiently produce undesirable impurities and fewer defects, and can be thinned. Manufacturing device and method of silicon substrate

Method used

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  • Apparatus and method for manufacturing silicon substrate, and silicon substrate
  • Apparatus and method for manufacturing silicon substrate, and silicon substrate
  • Apparatus and method for manufacturing silicon substrate, and silicon substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0172] Figure 1~3 It is a figure explaining Example 1 of this invention. In this Example 1, the melted silicon is adjusted to a connected body suitable for a molded state, and a device showing a two-stage conveyor type with non-contact rotating rollers is used. Below the crucible furnace, in the molding area 22, the rotating drum 3, the molding head, and the adjusting head (annealing head) are arranged as a connecting body. The forming head and the adjusting head (annealing head) of the first embodiment are specifically the forming conveyor belt 5 and the adjusting conveyor belt 7 composed of the endless base material 11 .

[0173] Molten silicon 2 melted in a crucible, forming area under an argon atmosphere such as figure 1 As shown, from the supply port 21 of the molten silicon supply part 1 of the crucible, at a temperature of about 1440° C., the substrate 11 constituting the conveyor belt 5 functioning as a molding head is cast, and the argon gas that coats the surface ...

Embodiment 2

[0192] Figure 4 It is a figure explaining Example 2 of this invention. In Example 2, a spin coater-type apparatus including a contact rotary guide is used as a connected body for adjusting molten silicon to a state suitable for molding. In the crucible 41 , molten molten silicon 42 flows down from the supply port 43 in a non-contact state along the guide rail 44 between the stopper and non-contact guide rail 44 and the non-contact temperature adjustment sleeve 53 . In this guide rail 44, the upper stopper portion is made of silica, and the lower guide rail portion is made of cordierite that ejects and discharges an inert gas.

[0193] In this Example 2, the main part of the silicon substrate molding area 58 is composed of the non-contact spin coater substrate 47 set on the support plate 50 of the spin coater which is rotated by the rotation shaft 51 of the spin coater. . Inside the rotating shaft 51 of the spin coater, a non-contact rail rotating shaft 52 is arranged coaxi...

Embodiment 3

[0203] Figure 5 It is a figure explaining Example 3 of this invention. In this embodiment, as a connection body for adjusting molten silicon to a state suitable for molding, a one-stage head-type device including a constant-pressure molten silicon storage tank is used. The device includes a melting zone 71 , a supply zone 72 and a forming zone 73 .

[0204] The melting zone 71 basically includes a silicon melting furnace 74 and a silicon melting crucible 75, and the melted silicon 76 in the crucible is stored at a certain temperature above the melting point.

[0205] The supply area 72 basically includes a molten silicon supply nozzle 77 and a valve 78 for adjusting the amount of molten silicon to be supplied. Ball valves, cone valves, butterfly valves, etc. can be appropriately selected for valves, and the material used must be selected to have a small reaction with high-temperature silicon. In addition, although not shown in the figure, the valve has a member that is con...

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Abstract

Provided are an apparatus and a method for efficiently manufacturing a flat and large-area polycrystalline thin board shaped silicon substrate having less undesirable mixed impurity and defects and a composite silicon substrate having a surface oxide film or the like. In a forming zone where a silicon ribbon (12) is manufactured from molten silicon under an inactive gaseous atmosphere, a forming belt conveyer (forming bed) (5) composed of a base material (11) is arranged. The base material is supplied with molten silicon (2) from a crucible furnace through a revolving roll (3) which adjusts the molten silicon into a state suitable for forming. The base material (11) is provided with a plurality of gas blow out ports and gas discharge ports for blowing and discharging a gas for a silicon ribbon (4) being formed from the molten silicon (2) from below the silicon ribbon. While stably holding the formed silicon ribbon (4) on the gas by the dynamic pressure balanced state of the gas being blown and the gas being discharged, and while forming a film on a silicon surface from a reactive material and the like contained in the gas, tensile stress is applied in a direction parallel to the surface of the formed silicon ribbon (4) and a silicon ribbon (12) is formed.

Description

technical field [0001] The present invention relates to a manufacturing apparatus, a manufacturing method, and a silicon substrate used for a silicon substrate or the like used in a solar cell or the like. Background technique [0002] Silicon substrates for solar cells (hereinafter referred to as "Si substrates") are broadly classified into monocrystalline silicon and polycrystalline silicon. [0003] The single crystal Si substrate can be manufactured by either the Czochraski method or the belt fusion method, but the former is the mainstream. The obtained Si single crystal ingot was sliced ​​to form Si substrates. Single crystal Si substrates have high photoelectric conversion efficiency, but the manufacturing cost of single crystals is high, and about 50% of silicon is lost by slicing the ingot, so the supply of Si substrates is insufficient for the rapidly increasing demand for solar cells . [0004] As a more effective method for manufacturing single-crystal Si subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/02C30B29/06H01L31/04
CPCC30B28/10H01L31/182C30B29/06Y02E10/546C30B15/007C30B15/002C30B15/30Y02P70/50
Inventor 小岛弦横山浩林丰
Owner 小岛 弦