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Radiating structure and preparation method thereof

A technology of heat dissipation structure and heating element, which is applied in heat exchange equipment, lighting and heating equipment, heat transfer modification and other directions, can solve the problems of volume limitation of heat dissipation structure, the heat dissipation efficiency has not been significantly improved, and the requirements of small devices cannot be met. To achieve the effect of high heat dissipation efficiency and small size

Active Publication Date: 2010-01-13
TSINGHUA UNIV +1
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  • Abstract
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  • Application Information

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Problems solved by technology

However, since carbon nanotubes are generally arranged in disorder in thermal interface materials, the advantages of longitudinal heat conduction of carbon nanotubes cannot be fully utilized. Therefore, the heat dissipation efficiency of this heat dissipation structure has not been significantly improved.
At the same time, since this heat dissipation structure also needs to include thermal interface materials and heat sinks at the same time, the volume of the heat dissipation structure is limited and cannot meet the requirements of tiny devices.

Method used

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  • Radiating structure and preparation method thereof
  • Radiating structure and preparation method thereof
  • Radiating structure and preparation method thereof

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preparation example Construction

[0020] see Figure 4 and Figure 5 The embodiment of the technical solution provides a method for preparing the heat dissipation structure 10 above, which specifically includes the following steps:

[0021] Step 1, providing a heating element 12 , the heating element 12 has a surface 18 .

[0022] The specific shape of the heating element 12 is not limited, as long as it has a surface 18 for disposing the fixing layer 14 . The melting point of the surface 18 of the heating element 12 should be higher than the melting point of the fixing layer, so as to ensure that the heat dissipation structure 10 will not damage the heating element 12 when it is placed on the heating element 12 . In this embodiment, the heating element 12 is a chip used in an integrated circuit.

[0023] Step 2, forming a molten fixing layer 14 on the surface 18 of the heating element 12 .

[0024] The fixed layer material in the molten state is arranged on the surface 18 of the heating element 12 by coat...

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Abstract

A radiating structure is fixedly arranged on the surface of a heating element. The radiating structure comprises a patterned carbon nanotube array and a fixing layer, and is fixed on the heating element through the fixing layer. A preparation method for the radiating structure comprises the following steps: providing the heating element which has a surface; arranging the molten fixing layer on the surface of the heating element; preparing the carbon nanotube array to form on a substrate, wherein the carbon nanotube array has a first end and a second end, and the second end is opposite to the first end and is connected with the substrate; inserting the first end of the carbon nanotube array into the fixing layer and cooling the fixing layer until the fixing layer is solidified; removing the substrate of the carbon nanotube array; and patterning the carbon nanotube array to form the radiating structure on the surface of the heating element.

Description

technical field [0001] The invention relates to a heat dissipation structure and a preparation method thereof, in particular to a heat dissipation structure based on carbon nanotubes and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the integration process of semiconductor devices, the degree of integration of semiconductor devices is getting higher and higher, and the operating frequency of semiconductor integrated devices (such as CPU) is also getting higher and higher, and the heat generated per unit time increases. The accumulation will cause the temperature to rise, which will lead to the decrease of the operating performance of the semiconductor integrated device including the stability. Therefore, it is necessary to dissipate the heat generated in time. At present, heat dissipation has become a problem that must be solved in the semiconductor integration process. [0003] With the reduction of the device vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K7/20H01L23/367
CPCF28F3/022F28F2013/006H01L23/3677H01L23/373H01L2924/0002Y10T29/4935Y10T428/25H01L2924/00
Inventor 范守善姜开利刘长洪刘亮
Owner TSINGHUA UNIV