Semiconductor wafer film thickness detecting device on basis of infrared optical interference method

An infrared optics and detection device technology, applied in the direction of using optical devices, measurement devices, semiconductor/solid-state device testing/measurement, etc., can solve the problems of difficult detection of concentric circles, inability to detect wafers, troublesome layout, etc., to achieve the realization of signal Processing and automatic detection, improve product quality, good stability

Active Publication Date: 2010-03-03
THE 45TH RES INST OF CETC
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Problems solved by technology

However, the existing film thickness detection devices have the following disadvantages: 1. A fixed light source is used in the mechanical structure, and then the film table is moved in the X-Y direction to determine the detection point. The disadvantage is that it is not easy to detect the point

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  • Semiconductor wafer film thickness detecting device on basis of infrared optical interference method
  • Semiconductor wafer film thickness detecting device on basis of infrared optical interference method
  • Semiconductor wafer film thickness detecting device on basis of infrared optical interference method

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Embodiment Construction

[0031] The structure of the device of the present invention is mainly composed of three parts: the carrying and rotating mechanism of the wafer, the adjusting and moving mechanism of the laser, and the vacuum adsorption gas path of the wafer. The structure of the device is as follows figure 1 shown.

[0032] Based on the principle of thin film interference of light, such as Figure 10 . The light intensity after interference is

[0033] E = E 1 + E 2 + 2 E 1 E 2 cos ( 4 n 2 π d cos θ λ )

[0034] The...

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Abstract

The invention provides a semiconductor wafer film thickness detecting device on the basis of an infrared optical interference method and relates to the technical field of chemical-mechanical polishing devices for a semiconductor wafer. The device comprises a wafer bearing and moving mechanism, a laser assembly and a data detecting and controlling circuit and is characterized in that the laser assembly is a movable laser assembly and the wafer bearing and moving mechanism is a wafer bearing and rotating mechanism. By adopting the device, multi-point detection on the surface of the wafer can becarried out, thus knowing the thickness and distribution condition of a wafer surface film layer so as to ensure the process parameters of a next polishing process, thus perfecting the polishing process and increasing the product quality. The device is especially suitable for the chemical-mechanical polishing device for the semiconductor wafer.

Description

technical field [0001] The invention relates to the technical field of an optical interference method film thickness detection device on chemical mechanical polishing equipment for semiconductor wafers. Background technique [0002] In semiconductor device processing, it is necessary to perform a CMP operation to remove processing defects to obtain high planarity. Before polishing, it is necessary to have a certain understanding of the condition of the film layer on the surface of the wafer to determine the polishing parameters; after polishing, it is necessary to understand the polishing status to determine the next polishing process. However, the existing film thickness detection devices have the following disadvantages: 1. A fixed light source is used in the mechanical structure, and then the film table is moved in the X-Y direction to determine the detection point. The disadvantage is that it is not easy to detect the points on the concentric circles, so it cannot It is...

Claims

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Application Information

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IPC IPC(8): G01B11/06H01L21/66
Inventor 吴旭陈波王东辉柳滨
Owner THE 45TH RES INST OF CETC
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