Method for producing SiC single crystal

Abstract

5 to 30 at% of Ti and 1 to 20 at% of Sn or 1 to 30 at% of Ge are added to an Si melt, and SiC single crystal are grown from SiC seed crystal by holding the SiC seed crystal immediately beneath the surface of the Si melt in a graphite crucible while maintaining temperature gradient descending from the inner side of the Si melt to the surface of the melt.

Description

technical field [0001] The present invention relates to a method for manufacturing SiC single crystals using a solution. Background technique [0002] The energy bandgap of silicon carbide (SiC) is larger than that of silicon (Si). Therefore, various methods have been proposed to produce high-quality SiC single crystals suitable as semiconductor materials. These methods are mainly classified into sublimation methods and solution methods. The solution method has drawn more attention from those skilled in the art due to its relatively high polytype controllability and effective reduction of microtubules. [0003] In a typical solution method, the temperature gradient of the Si melt in the graphite crucible is maintained such that the temperature drops from the inside of the Si melt toward its surface. Carbon (C) in the high temperature zone on the lower side of the graphite crucible dissolves into the Si melt, and then it rises mainly through the convection of the Si melt t...

AI Technical Summary

Problems solved by technology

However, none of these techniques adequately meets both requirements

[0008] Therefore, none of the above-mentioned technologies in the related art has achieved a high crystal growth rate and a high growth surface smoothness.

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