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Dynamic temperature backside gas control for improved within-substrate processing uniformity

A technology to deal with uniformity and non-uniformity, used in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc.

Active Publication Date: 2011-08-17
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the system described only facilitates the static distribution of the heat transfer gas

Method used

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  • Dynamic temperature backside gas control for improved within-substrate processing uniformity
  • Dynamic temperature backside gas control for improved within-substrate processing uniformity
  • Dynamic temperature backside gas control for improved within-substrate processing uniformity

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Embodiment Construction

[0038] In the following description, for purposes of illustration and not limitation, specific details are set forth, such as specific geometries of substrate processing systems and descriptions of various processes. However, it is to be understood that the invention may be practiced in other embodiments that depart from the specific details.

[0039] The substrate processing system may include a plasma processing system configured to treat a substrate with a plasma. Alternatively, the substrate processing system may include a non-plasma processing system configured to process the substrate. Substrate processing systems may include etch systems that utilize plasmas to facilitate dry etch processes during semiconductor production. Examples of etching systems are provided in US Patent No. 6,492,612 and PCT Publication WO 02 / 086957; each of which is expressly incorporated herein by reference. Nonetheless, the present invention can be used to improve uniformity in deposition sys...

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Abstract

Control of radial or non-radial temperature distribution is controlled across a substrate during processing to compensate for non-uniform effects, including non-uniformities arising from system or process. Temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck (substrate support table 20, 20a) to vary heat conduction across the wafer. Ports (26, 26a) in the support table (20, 20a) are grouped, and gas to or from the groups is separately controlled by different valves (32) responsive to a controller (35) that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities. Wafer deformation is affected by separately controlling the pressure of the backside gas at different ports (26, 26a) to control the local force exerted on the backside of the substrate, by separately dynamically controlling valves (32) affecting gas flow to a port (26, 26a) and ports (26, 26a) surrounding said port (26, 26a).

Description

technical field [0001] The present invention relates to controlling process uniformity along a substrate. In particular, the invention relates to controlling the temperature and deformation of the substrate and regulating the gas pressure on the backside of the substrate during substrate processing. Background technique [0002] In semiconductor fabrication, the complexity of devices formed on semiconductor substrates continues to increase at a rapid rate, while feature sizes such as transistor gates continue to decrease well below the 93 nanometer (nm) technology node. As a result, fabrication processes require increasingly sophisticated unit operation and process integration schemes, as well as process and hardware control strategies to ensure uniform fabrication of devices along the substrate. For example, during the fabrication of gate electrode structures in transistor devices, a patterning system and an etching system are required to achieve and maintain the critical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/687C23C16/458
CPCH01L21/67248H01L21/67069H01L21/68735C23C16/466H01L21/68714C23C16/4586C23C16/458H01L21/00H01L21/687
Inventor 拉达·桑达拉拉珍陈立麦里特·法克
Owner TOKYO ELECTRON LTD