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Under bump metallization structure having a seed layer for electroless nickel deposition

A technology of electroless nickel plating and seed layer, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., and can solve the problem of expensive sputtering layer

Inactive Publication Date: 2010-03-31
FLIPCHIP INT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these sputtered layers are more expensive and not as thick as electroless nickel

Method used

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  • Under bump metallization structure having a seed layer for electroless nickel deposition
  • Under bump metallization structure having a seed layer for electroless nickel deposition
  • Under bump metallization structure having a seed layer for electroless nickel deposition

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Embodiment Construction

[0044]An under bump metallization (UBM) structure is disclosed having a thin film metal layer used as a seed layer for deposition of electroless nickel or electroless nickel alloys. The seed layer can be any material or metal to which electroless nickel adheres. The use of a metal seed layer in combination with an electroless nickel layer results in a bottom bump metallization that provides improved thermomechanical strength and drop test performance. This improved mechanical performance for wafer-level packaging applications is achieved through the inherent low brittleness of the UBM structure, improved adhesion of electroless nickel to an otherwise non-conductive surface, and optimized UBM deposition for electroless nickel obtained by design.

[0045] The use of a seed layer allows the use of electroless nickel as a UBM on devices that do not have a suitable final metal alloy as an electrical contact. For example, the disclosed UBM with a thin metal seed layer allows the s...

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Abstract

Structures and methods for fabrication of an under bump metallization (UBM) structure having a metal seed layer and electroless nickel deposition layer are disclosed involving a UBM structure comprising a semiconductor substrate, at least one final metal layer, a passivation layer, a metal seed layer, and a metallization layer. The at least one final metal layer is formed over at least a portion of the semiconductor substrate. Also, the passivation layer is formed over at least a portion of the semiconductor substrate. In addition, the passivation layer includes a plurality of openings. Additionally, the passivation layer is formed of a non-conductive material. The at least one final metal layer is exposed through the plurality of openings. The metal seed layer is formed over the passivation layer and covers the plurality of openings. The metallization layer is formed over the metal seed layer. The metallization layer is formed from electroless deposition.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit and priority of U.S. Provisional Application Serial No. 60 / 945,310, filed June 20, 2007, and U.S. Nonprovisional Application No. 12 / 142,415, filed June 19, 2008, the above-listed patent references The literature is hereby incorporated by reference in its entirety. [0003] This application includes material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent disclosure as it appears in the Patent and Trademark Office files and records, but otherwise, all copyright rights are reserved. technical field [0004] The present invention relates to chip-scale and flip-chip processing at the wafer level for microelectronic semiconductors. More specifically, a composition of a bottom bump metallization structure having a metal seed layer and an electroless nickel deposition layer and a related manufacturing method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2924/01015H01L2924/01032H01L2924/01082H01L24/05H01L2224/05555H01L2924/01029H01L2924/00013H01L24/12H01L2224/05552H01L2924/01022H01L2224/0401H01L2224/1147H01L2924/01028H01L2224/03H01L2924/014H01L2924/01013H01L2924/01003H01L2224/05554H01L2224/05572H01L24/03H01L2224/05568H01L2924/05042H01L2924/01007H01L2924/01079H01L2924/14H01L2924/01005H01L2924/01033H01L2924/01006H01L2224/03914H01L23/3114H01L2924/01078H01L2924/01014H01L2224/131H01L2924/00014H01L2224/13099
Inventor 托马斯·施特罗特曼
Owner FLIPCHIP INT
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