Mass analyzing magnet for broadband ion beam and implanter system

A mass analysis, ion beam technology, applied in the direction of magnets, magnetic objects, discharge tubes, etc., can solve the problems of small system aberration, can not provide mass resolution, etc., achieve zero system aberration, superior control ability, reduce angle discrete effects

Inactive Publication Date: 2010-04-07
胡新平 +2
View PDF8 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems in the prior art, the present invention provides a mass analysis magnet and injector system for broadband ion beams, which solves the problem that

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mass analyzing magnet for broadband ion beam and implanter system
  • Mass analyzing magnet for broadband ion beam and implanter system
  • Mass analyzing magnet for broadband ion beam and implanter system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The present invention will be further described below in conjunction with accompanying drawing.

[0051] Some descriptions of the prior art are as follows:

[0052] Such as figure 1 Among them, reproduced from U.S. Patent No. 5834786, a broadband beam ion beam implanter system for flat panel displays produced by Mitsui Shipbuilding Corporation of Japan, the system includes a magnetic field mass analyzer, although it has only a weak mass resolution capability (mass resolution is 2), but for flat panel displays this is more than enough to eliminate some of the harsh contaminant ions.

[0053] Different from the above, the broadband beam ion implanter system produced by Varian Semiconductor Corporation of the United States is used for semiconductor silicon wafer implantation. The system utilizes two different magnets to generate a suitable broadband ion beam. The first magnet performs mass analysis of the ion beam and the second magnet parallelizes the ion beam. The ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the implantation field of broadband ion beams, and discloses a mass analyzing magnet for broadband ion beams. The mass analyzing magnet comprises a magnet and a coil connected with a power supply. The magnet comprises magnetic poles, a magnet yoke and magnetic shielding plates, the magnetic poles comprise an upper magnetic pole and a lower magnetic pole, the magnetic shielding plates comprise an upper magnetic shielding plate and a lower magnetic shielding plate, and a magnetic field space for the broadband ion beams to pass in a certain route is arranged between the upper magnetic pole and the lower magnetic pole. The invention further discloses an implanter system, which comprises an ion source, an extraction electrode unit, a deflection speed-reducing unit, a mass analyzing magnet, a target workpiece and workpiece transmitting unit, a beam flux measuring and diagnosing unit and a control unit. The invention has the beneficial effect of high quality resolution and nearly zero system aberration, and can generate pure broadband ion beams of 300mm, 450mm and even 1000mm, thereby improving the quality of ultra-low energy ion beams generated by a speed reducer and decreasing the angular dispersion of the ultra-low energy ion beams.

Description

technical field [0001] The invention relates to the field of implantation of broadband ion beams, in particular to a mass analysis magnet and implanter system for broadband ion beams. Background technique [0002] In the prior art, ion beams produced from ion sources typically contain one or more unwanted ions derived from ion chamber materials of the ion source and working gas molecules or solid molecules provided to produce the desired ions. Therefore, it has been standard practice for many years to use a magnetic field mass analyzer to separate these unwanted ions from the ion beam. However, this type of magnetic field mass analyzer has become increasingly difficult and expensive for broadband ion beams, especially those with large aspect ratios and large beam currents. Researchers have developed different ion implantation systems to generate broadband ion beams. However, due to the unsatisfactory performance of the analytical magnets, these types of ion implantation sy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01F7/00H01J37/317
Inventor 胡新平胡爱平黄永章
Owner 胡新平
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap