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Power AlGaN/GaN Schottky diode and manufacturing method thereof

A technology of Schottky diode and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of inconvenient parallel packaging of multiple device units and heat dissipation, so as to improve heat dissipation performance, increase Effective area effect

Active Publication Date: 2013-04-03
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] It can be seen that the lateral conductive structure can take advantage of the advantages of the two-dimensional electron gas conduction channel, but it is not convenient to realize the parallel packaging and heat dissipation of multiple device units; while the vertical conductive structure is convenient to realize the parallel connection of multiple device units, but it is difficult to add horizontal two-dimensional gas-electron conduction channel

Method used

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  • Power AlGaN/GaN Schottky diode and manufacturing method thereof
  • Power AlGaN/GaN Schottky diode and manufacturing method thereof
  • Power AlGaN/GaN Schottky diode and manufacturing method thereof

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Embodiment 1

[0034] as attached figure 1 As shown, the structure of the power type AlGaN / GaN Schottky diode in the present invention is shown, and only the structures of two adjacent device units are shown here, which include: from bottom to top, low resistance n-type Si substrate layer 6, a buffer layer 5 composed of an AlN single-layer structure or a multi-layer structure formed of AlGaN and AlN, a GaN layer 4, an AlGaN layer 3, and a gate 1 arranged on the AlGaN layer 3; the GaN A heterojunction two-dimensional electron gas conduction channel 11 is formed between the layer 4 and the AlGaN layer 3 thereon, and the power AlGaN / GaN Schottky diode utilizes the AlGaN / GaN heterojunction two-dimensional electron gas conduction channel to The transport current, high electron concentration and high electron mobility of the two-dimensional electron gas can effectively reduce the on-resistance of the device.

[0035] In addition, it also includes a sinker hole structure 9 arranged on the surface ...

Embodiment 2

[0038] as attached figure 2 As shown, it is another structural schematic diagram of the power type AlGaN / GaN Schottky diode of the present invention. The structure in this embodiment is basically the same as that in Embodiment 1, except that the sinker hole structure 9 is formed from the AlGaN The surface of layer 3 extends to a position inside the Si substrate layer 6 to minimize the on-resistance.

Embodiment 3

[0040] as attached image 3 As shown, it is a schematic diagram of another structure of the power type AlGaN / GaN Schottky diode of the present invention. The structure in this embodiment is basically the same as that of Embodiment 1, the difference is that the contact between the gate 1 and the AlGaN layer 3 A passivation layer 8 is also provided between the edges, and the material of the passivation layer is SiOx or Al 2 o 3 or Si 3 N 4 . It is used to suppress the edge effect of the electric field and increase the breakdown voltage.

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Abstract

The invention discloses a power AlGaN / GaN Schottky diode which comprises a low-resistance n-shaped Si substrate layer, a buffer layer, a GaN layer, an AlGaN layer and a grid electrode arranged on the AlGaN layer in sequence from the bottom up, wherein a heterojunction two-dimensional electron gas conducting channel is formed between the GaN layer and the AlGaN layer; and the diode also comprises an upper Ohmic contact layer, a lower Ohmic contact layer and a counter bore structure arranged on the surface of the AlGaN layer. The invention uses the counter bore structure to realize the longitudinal transportation of current in the transverse AlGaN / GaN Schottky diode. The invention simultaneously provides a manufacturing method of the power AlGaN / GaN Schottky diode. The invention provides a mixed structure combined by a transverse conducting structure and a longitudinal conducting structure, not only has the characteristics of high concentration and high electronicmobility of the transverse two-dimensional electron gas conducting channel, but also realizes the longitudinal transportation of the current, and is convenient to realize the parallel encapsulation of a plurality of device units so as to obtain forward high-current features.

Description

technical field [0001] The invention relates to a Schottky diode and a manufacturing method thereof, in particular to a power type AlGaN / GaN Schottky diode and a manufacturing method thereof. Background technique [0002] In modern society, with the continuous development of electronic power technology, electronic devices such as voltage regulators, rectifiers, and inverters are widely used in daily life, involving high-voltage power supply, power management, rectification, factory automation, and motor vehicle energy distribution management. field, the performance requirements are getting higher and higher. Power diodes and switching devices are an integral part of these applications. In recent years, Schottky diodes with the characteristics of high voltage resistance, high current, and low power consumption have attracted more and more attention due to their unique performance advantages. [0003] A Schottky diode is a majority carrier device that operates using the rect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/08H01L29/872H01L21/8222H01L21/329
Inventor 刘扬李佳林贺致远张佰君王钢
Owner SUN YAT SEN UNIV