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Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material

A precise control, semiconductor technology, applied in polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of time and resource waste

Active Publication Date: 2012-11-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, this method requires the growth and characterization of ternary materials first, and then the growth and characterization of quaternary materials, which is a waste of time and resources.

Method used

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  • Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material
  • Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material
  • Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material

Examples

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Embodiment 1

[0039] Precise Control A x B 1-x C y D. 1-y The Growth and Characterization Method of InGaAsP Composition of Type Quaternary Semiconductor Direct Bandgap Material

[0040] (1) It is necessary to grow the target component on the InP substrate as In 0.7 Ga 0.3 As 0.4 P 0.6 The quaternary semiconductor direct bandgap material (this material and component are taken as an example, other materials and components can be deduced by analogy);

[0041] (2) Growth of In on InP substrates by conventional molecular beam epitaxy x Ga 1-x As y P 1-y Quaternary semiconductor materials;

[0042] (3) Use a high-resolution x-ray diffractometer to test the room temperature lattice constant of the sample. First, use a detector without an analyzer to test the (004) crystal plane symmetric ω / 2θ scanning rocking curve of the sample, and use the formula (1) Or (2) the lattice constant of the epitaxial layer under complete relaxation or complete strain can be obtained. When the epitaxial pe...

Embodiment 2

[0047] Precise control of AB x C y D. 1-x-y Growth and Characterization Method of InGaAlAs Components of Type Quaternary Semiconductor Direct Bandgap Material

[0048] (1) It is necessary to grow the target component on the InP substrate as In 0.4 Ga 0.35 Al 0.25 As's quaternary semiconductor direct bandgap material (this material and components are taken as an example, other materials and components can be deduced by analogy);

[0049] (2) Using conventional molecular beam epitaxy to grow InGaAlAs quaternary semiconductor materials on InP substrates;

[0050] (3) Using a high-resolution x-ray diffractometer to test the grown In x Ga y Al 1-x-y For the room temperature lattice constant of As quaternary semiconductor material samples, the (004) symmetric ω / 2θ scanning rocking curve of the sample is tested first, and the epitaxial layer under complete or complete strain relaxation can be obtained by formula (1) or (2). When the lattice constant, the epitaxial peak is fa...

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Abstract

The invention relates to a method for accurately controlling growth and characterization of components of a quaternary semiconductor direct bandgap material, which comprises the following steps: growing a quaternary semiconductor material on a substrate by a conventional molecular-beam epitaxy method; respectively measuring a room temperature lattice constant and a room temperature forbidden bandwidth of the quaternary semiconductor material; calculating according to a relation between the room temperature lattice constant and the room temperature forbidden band width of the quaternary semiconductor material and the components of the material to obtain components of the material; and by adjusting growth conditions, repeatedly operating until the components of the material accord with target components, and finishing the growth of the quaternary semiconductor direct bandgap material. In the method, the corresponding quaternary semiconductor material is not needed to be grown in advance, and the quaternary semiconductor direct bandgap material can be directly grown on the substrate, so the cost is saved, and the required components of the material are accurately and effectively guided to be grown.

Description

technical field [0001] The invention belongs to the field of growth and preparation of quaternary semiconductor direct bandgap materials, in particular to a growth and characterization method for precisely controlling the components of quaternary semiconductor direct bandgap materials. Background technique [0002] Quaternary compound semiconductor materials can provide more flexible material parameter adjustment than binary and ternary materials, so they are widely used in semiconductor optoelectronics and microelectronic devices, such as InGaAsP materials on InP substrates in short-wave In the field of infrared semiconductor lasers, InGaAsSb and AlGaAsSb materials on GaSb substrates have important applications in the field of mid-infrared semiconductor lasers. At the same time, the growth and characterization process of quaternary semiconductor materials will introduce more new problems than binary and ternary materials. For example, it is more difficult to precisely contr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B23/02C30B25/02C30B25/16
Inventor 顾溢张永刚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI