Channel MOS P-N junction Schottky diode structure and manufacturing method thereof

Abstract

The invention discloses a channel MOS P-N junction Schottky diode structure and a manufacturing method thereof. The structure mainly comprises a substrate, a channel structure, a polysilicon layer, an oxide layer, a metal layer and an ion implantation area; and the manufacturing method comprises the following steps: providing the substrate; forming a first mask layer on the substrate; performing a first photoetching process to form the channel structure; growing a gate oxide layer in the channel structure; performing an ion implantation process to form the ion implantation area; forming the polysilicon layer in the channel structure; forming a second mask layer on partial polysilicon layer and the first mask layer; performing a second photoetching process to form a side wall structure and expose the partial polysilicon layer and the substrate; and forming the metal layer on a generating structure. The channel MOS P-N junction Schottky diode structure has the characteristics of low reverse voltage leakage current, low forward voltage drop value, high reverse withstanding voltage value and low reverse recovery time.

Description

technical field [0001] The present invention relates to a kind of channel type Metal Oxide Semiconductor (MOS) P-N junction Schottky diode structure and its manufacturing method, especially relate to have lower leakage current, lower forward conduction voltage drop value (V F ), a higher reverse withstand voltage value, and a channel type metal oxide semiconductor P-N junction Schottky diode structure with low reverse recovery time characteristics. Background technique [0002] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by the metal work function and semiconductor doping concentration). The P-N diode is a dual-carrier element that conducts a large amount of current. However, the forward conduction voltage drop of the component (V F ) is generally higher t...

AI Technical Summary

Problems solved by technology

[0004] The trench Schottky barrier diode manufactured by the above method has a low forward conduction voltage drop value (V F ) and low reverse leakage current, but due to the insertion of the P-type region, a part of the conduction area is consumed, so the size of the component needs to be enlarged to obtain the same low conduction voltage drop value (V F )

Images