Channel MOS P-N junction Schottky diode structure and manufacturing method thereof

A technology of Schottky diode and channel structure, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low forward voltage drop value, consumption of conductive area, etc.

Active Publication Date: 2010-04-28
PFC DEVICE HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The trench Schottky barrier diode manufactured by the above method has a low forward conduction voltage drop value (V F ) and low reverse leakage current, but due to the ins

Method used

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  • Channel MOS P-N junction Schottky diode structure and manufacturing method thereof
  • Channel MOS P-N junction Schottky diode structure and manufacturing method thereof
  • Channel MOS P-N junction Schottky diode structure and manufacturing method thereof

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Embodiment Construction

[0101] See figure 2 , which is a schematic diagram of a first preferred embodiment of a trenched metal-oxide-semiconductor P-N junction Schottky diode structure developed by the present invention to improve defects caused by known technical means. We can clearly see from the figure that the trench metal oxide semiconductor P-N junction Schottky diode structure 2 mainly includes a substrate 20, a channel structure 21, an ion implantation region 22, a polysilicon layer 23, an oxide Object layers 213, 210, 24 and metal layers 25, 26, wherein the substrate 20 is composed of a high doping concentration N-type silicon substrate (N+ silicon substrate) 201 and a low doping concentration N-type epitaxial layer (N- epitaxial layer) 202; the channel structure 21 is formed in the substrate 20 and the oxide layer 210, 213; the ion implantation region 22 is formed in the low doping concentration N-type epitaxial layer 202, and is formed in the channel The polysilicon layer 23 in the struc...

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Abstract

The invention discloses a channel MOS P-N junction Schottky diode structure and a manufacturing method thereof. The structure mainly comprises a substrate, a channel structure, a polysilicon layer, an oxide layer, a metal layer and an ion implantation area; and the manufacturing method comprises the following steps: providing the substrate; forming a first mask layer on the substrate; performing a first photoetching process to form the channel structure; growing a gate oxide layer in the channel structure; performing an ion implantation process to form the ion implantation area; forming the polysilicon layer in the channel structure; forming a second mask layer on partial polysilicon layer and the first mask layer; performing a second photoetching process to form a side wall structure and expose the partial polysilicon layer and the substrate; and forming the metal layer on a generating structure. The channel MOS P-N junction Schottky diode structure has the characteristics of low reverse voltage leakage current, low forward voltage drop value, high reverse withstanding voltage value and low reverse recovery time.

Description

technical field [0001] The present invention relates to a kind of channel type Metal Oxide Semiconductor (MOS) P-N junction Schottky diode structure and its manufacturing method, especially relate to have lower leakage current, lower forward conduction voltage drop value (V F ), a higher reverse withstand voltage value, and a channel type metal oxide semiconductor P-N junction Schottky diode structure with low reverse recovery time characteristics. Background technique [0002] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by the metal work function and semiconductor doping concentration). The P-N diode is a dual-carrier element that conducts a large amount of current. However, the forward conduction voltage drop of the component (V F ) is generally higher t...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L29/872
Inventor 赵国梁陈美玲苏子川郭鸿鑫
Owner PFC DEVICE HLDG
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