A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof

An oxide semiconductor, P-N technology, used in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve problems such as high forward voltage drop, low reverse leakage current, and low forward voltage drop. , to achieve the effect of low forward voltage drop, low leakage current, and small reverse bias leakage current

Active Publication Date: 2011-09-14
PFC DEVICE HLDG
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In fact, it is composed of two 300-volt trench Schottky diodes in series, and the forward conduction voltage drop value of the component (V F ) is also higher
How to design components to achieve higher reverse withstand voltage (such as above 600 volts), lower forward conduction voltage drop (V F ), lower reverse leakage current and lower reverse recovery time (Reverse Recovery Time; t RR ), that is to say, has a fast reaction speed, which is really a big challenge

Method used

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  • A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof
  • A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof
  • A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof

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Embodiment Construction

[0034] See figure 2, which is a schematic diagram of a preferred embodiment of a metal oxide semiconductor P-N junction Schottky diode structure developed by the present invention to improve the shortcomings of known technical means. We can clearly see from the figure that the metal oxide semiconductor P-N junction Schottky diode 2 structure mainly includes a substrate 21, a trench structure 22, a gate structure 23, a sidewall structure 24, a metal layer 25 and an ion Implantation region 26, wherein the substrate 21 is composed of a high doping concentration N-type silicon substrate (N+ silicon substrate) 211 and a low doping concentration N-type epitaxial layer (N- epitaxial layer) 212, the trench structure 22 is formed in Above the substrate 21, the gate structure 23 is formed in the trench structure 22 and protrudes from the surface 2120 of the low-doped N-type epitaxial layer 212, and the sidewall structure 24 is formed on the surface of the substrate 21 and located on th...

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Abstract

The invention provides a metal oxide semiconductor P-N junction schootky diode structure and the production method thereof, and the method comprises the following steps: providing a base plate; forming a first mask layer on the base plate; carrying out the first photoetching process to from a ditch structure; carrying out the first ion injection in the first ditch structure; carrying out the second photoetching process to form a side wall structure; forming a second mask layer on the bottom of the ditch structure and the side wall structure; carrying out the third photoetching process on the base plate to form a gate structure in the ditch structure; carrying out the second ion injection process in the ditch structure; after eliminating photoresist, carrying out the third ion injection process in the ditch structure; carrying out the fourth photoetching process; forming a metal layer on the gate surface of the obtained structure; carrying out the fifth photoetching process, and eliminating part of the metal layer. The invention has the advantages of both P-N junction and schootky diode.

Description

technical field [0001] The present invention relates to a metal oxide semiconductor P-N junction Schottky diode structure and a manufacturing method thereof, especially having lower leakage current and lower forward conduction voltage drop value (V F ), a metal oxide semiconductor P-N junction Schottky diode structure with high reverse withstand voltage value and low reverse recovery time characteristics. Background technique [0002] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by the metal work function and semiconductor doping concentration). The P-N diode is a dual-carrier element that conducts a large amount of current. However, the forward operating voltage drop of the element (V F ) is generally higher than that of Schottky diodes, and the reaction s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8249H01L27/095
Inventor 赵国梁郭鸿鑫苏子川
Owner PFC DEVICE HLDG
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