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Magnesium aluminium spinel fluorescence substrate material with doping of manganese and chromium and preparation method thereof

A magnesium-aluminum spinel and fluorescent substrate technology, which is applied in the direction of luminescent materials, chemical instruments and methods, and the use of gas discharge lamps, can solve the problems of lattice mismatch, poor thermal conductivity, and relatively expensive. Achieve the effects of simplifying the production process, reducing production costs, and small lattice mismatch

Inactive Publication Date: 2010-05-12
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SiC has a smaller lattice mismatch (about 3.4%) with GaN, which is already superior in thermal conductivity and electrical conductivity, but it is still relatively expensive; and the SiC substrate absorbs ultraviolet light below 380 nanometers, which is not suitable for use. Research and development of LEDs with ultraviolet excitation below 380 nm
Although the sapphire substrate has the advantages of high quality and relatively low price, it has extremely high resistivity, poor thermal conductivity, and it has a thermal expansion coefficient that is very different from GaN, and has a large crystallinity with GaN. Lattice mismatch (about 13.9%)
However, since sapphire cannot absorb blue light and emit yellow light, nor can it emit yellow light through electrical excitation, it is impossible to use a sapphire substrate alone to realize a white LED.

Method used

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  • Magnesium aluminium spinel fluorescence substrate material with doping of manganese and chromium and preparation method thereof
  • Magnesium aluminium spinel fluorescence substrate material with doping of manganese and chromium and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0026] Embodiment 1: prepare MgO (1-z) ·(Al 2 o 3 ) (x-y) :Mn z , Cr y Phosphor substrate crystal

[0027] In this embodiment, x=1, the molar concentration z of Mn doping is 0.5%, the molar concentration y of Cr doping is 0.4%, and MgO, Al (Pr i Oh) 3 , MnCO 3 and Cr 2 o 3 A total of 500 grams. Use a mixed solution of isopropanol and water (the ratio of isopropanol and water is 1:1) to disperse MgO, and at the same time, in another container, use water or a mixture of isopropanol and water (the ratio of isopropanol and water is 1:1). ) is the hydrolyzate and the aluminum isopropoxide is hydrolyzed to obtain a gel. The obtained MgO dispersion solution, gel, MnCO 3 and Cr 2 o 3 Fully mix with a planetary ball mill to form a uniform mixed raw material, put it in an oven and dry at 120°C for 24 hours, take it out and grind it to get the precursor powder. Precursor powder at 30kg / cm 2 Pressed into a raw material cake under high pressure and sintered at a temperature...

Embodiment 2

[0028] Embodiment 2: prepare MgO (1-z) ·(Al 2 o 3 ) (x-y) :Mn z , Cr y Phosphor substrate crystal

[0029] In this embodiment, x=1, the molar concentration z of Mn doping is 1%, and the molar concentration y of Cr doping is 1%, and MgO and Al (Pr i Oh) 3 , MnCO 3 and Cr 2 o 3 A total of 500 grams. Disperse MgO with water to obtain a MgO dispersion solution, and at the same time use water as a hydrolyzate to hydrolyze aluminum isopropoxide to obtain a gel. The obtained MgO dispersion solution, gel, MnCO 3 and Cr 2 o 3 Fully mix the mixed raw materials with a planetary ball mill, put them into an oven and dry them at 80°C for 12 hours, take them out and grind them to get the precursor powder. Precursor powder at 20kg / cm 2 Pressed into a raw material cake under high pressure and sintered at a temperature of 1400°C for 12 hours. After taking it out, put it into a single crystal furnace, vacuumize, and pass high-purity nitrogen or high-purity argon into the furnace;...

Embodiment 3

[0030] Embodiment 3: prepare MgO (1-z) ·(Al 2 o 3 ) (x-y) :Mn z , Cr y Phosphor substrate crystal

[0031] In this embodiment, x=2, the molar concentration z of Mn doping is 5%, and the molar concentration y of Cr doping is 3%, and MgO and Al (Pr i Oh) 3 , MnCO 3 and Cr 2 o 3 A total of 500 grams. Disperse MgO with water to obtain a MgO dispersion solution, and at the same time use water as a hydrolyzate to hydrolyze aluminum isopropoxide to obtain a gel. The obtained MgO dispersion solution, gel, MnCO 3 and Cr 2 o 3 Use a planetary ball mill to fully mix into a uniform mixed raw material, put it in an oven and dry it at 100°C for 24 hours, take it out and grind it to get a precursor powder. The precursor powder is mixed at 20kg / cm 2 Pressed into a raw material cake under high pressure and sintered at a temperature of 1400°C for 24 hours. After taking it out, put it into a single crystal furnace, vacuumize, and feed high-purity nitrogen or high-purity argon into...

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Abstract

The invention provides a magnesium aluminium spinel flurescence substrate material with the doping of manganese and chromium, which is used for preparing GaN based and ZnO based white LED. The molecular formula of the flurescence substrate material is MgO(1-z).(Al2O3)(x-y):Mnz, Cry, wherein the numeric area of x is 1-5, the numeric area of y is 0.00001-0.1, and the numeric area of z is 0.00001-0.1, wherein Mn ion and Cr ion respectively substitute the position of Mg ion and Al ion in the magnesium aluminium spinel. The flurescence substrate is suitable for the epitaxial growth of high-quality GaN based and ZnO based blue light semiconductor membrane, can realize white light emitting, and can effectively lower the production cost of white light LED and simplify the production process.

Description

technical field [0001] The invention relates to the preparation of a GaN-based and ZnO-based white light emitting diode fluorescent substrate material, in particular a magnesium-aluminum spinel fluorescent substrate material co-doped with manganese and chromium and a preparation method thereof. Background technique [0002] At present, the most widely used light sources are incandescent lamps and fluorescent lamps. Although incandescent lamps and fluorescent lamps are cheap, easy to prepare and mature in preparation technology; however, incandescent lamps have a short lifespan, while fluorescent lamps have low power conversion efficiency. As a new lighting source, light-emitting diode (LED) has the advantages of high efficiency, small size, long life and low price. At present, the technology of single-color LEDs (red, yellow, blue, green, etc.) has matured and has been commercialized. However, monochromatic LEDs cannot be used as a white light illumination source and as a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/64H01L33/50
CPCY02B20/181Y02B20/00
Inventor 夏长泰饶汗杨卫桥吴锋王静雅徐晓东周国清
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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