Anti-radiation field effect transistor, CMOS integrated circuit and preparation thereof

Abstract

The invention discloses an anti-radiation field effect transistor, a CMOS integrated circuit and a preparation method thereof, wherein an N-type field effect transistor is provided with an n+ epitaxial layer between a substrate and a body area; a channel is a p / p+ inverse doped structural layer; a source and a drain are isolated from the body area through an L-shaped insulating layer respectively; the distance from the top surface of the L-shaped insulating layer to the upper surface of the channel is smaller than the thickness of the channel; the corresponding n+ epitaxial layer is changed into a p+ epitaxial layer; and the p / p+ inverse doped structural layer is changed into an n / n+ inverse doped structural layer so as to form a P-type field effect transistor. The transistor not only resists single-particle effects, but also resists total-dose effects. The CMOS integrated circuit formed can fundamentally solve the singleness problem of anti-radiation effects. In addition, the transistor can be prepared based on a bulk-silicon substrate and does not need SOI substrates, thereby having the advantages of reduced cost, simple preparation method, compatibility with conventional CMOS processes and good controllability.

Description

technical field [0001] The invention relates to integrated circuit anti-irradiation technology, in particular to an anti-irradiation quasi-SOI field effect transistor, CMOS integrated circuit and a preparation method thereof. Background technique [0002] The rapid development and wide application of information technology has changed the traditional production, management, management and life style, and has brought a profound impact on all aspects of human society. As we all know, the key to realizing social informatization is all kinds of computers and communication machines, the basis of which is microelectronic products, and the core is silicon-based CMOS integrated circuits. With the development of science and technology, especially the development of space technology, nuclear power and nuclear weapons, the relationship between nuclear radiation environment and electronic technology is getting closer. At present, my country's aerospace technology is developing rapidly....

AI Technical Summary

Problems solved by technology

However, due to the existence of the SOI substrate, its inherently thicker buried oxide layer will capture holes when irradiated by the space radiation source, causing the back gate transistor to be turned on, thereby causing an increase in the off-state current and increasing power consumption. At the same time, it may also affect the front gate threshold, etc.

It can be seen that although SOI devices have a strong ability to resist single event events, the inherent buried oxide layer of SOI will make the anti-total dose effect very poor.

This makes it difficult for integrated circuits, whether based on bulk silicon devices or SOI devices, to have strong resistance to single event effects and total dose effects.

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