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Method for inhibiting oxidization of copper in copper interconnect structure

A copper interconnect structure and copper oxidation technology, applied in the field of microelectronics, can solve the problems of increasing effective resistivity, worsening contact performance, reducing integrated circuit performance and reliability, etc.

Inactive Publication Date: 2010-05-19
FUDAN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] In the interconnection process, the oxidation of copper in the process is inevitable. The oxidation of copper will increase the effective resistivity of copper and deteriorate the contact performance, which will increase the interconnection delay and reduce the performance and reliability of integrated circuits.
The experimental results found that when Ru was introduced, due to the enhanced oxidation of Cu by Ru, the oxidation problem of Cu was more serious after the annealing process

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  • Method for inhibiting oxidization of copper in copper interconnect structure
  • Method for inhibiting oxidization of copper in copper interconnect structure
  • Method for inhibiting oxidization of copper in copper interconnect structure

Examples

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Embodiment 1

[0017] (1) In Si or SiO 2 Alternatively, a C-doped diffusion barrier layer is deposited on the dielectric substrate. The original diffusion barrier layer used in this example is a TaN layer. The magnetron sputtering method is adopted, and the target material is high-purity Ta and high-purity C. During the sputtering process, the lower the background vacuum, the better the quality of the film prepared. The background vacuum degree given in this example is 3×10 -5 Pa. Ar gas and a certain proportion of N are introduced during deposition 2 . Ar and N 2 The ratio can vary from 9:1 to 2:1, N 2 The higher the content, the greater the resistivity of the prepared film. The final working pressure is between 0.1Pa-1Pa. The amount of C doped is obtained by adjusting the sputtering power of the Ta target and the C target, and the C content is between 5% and 50%. Control the film thickness by controlling the deposition time. The thickness of the diffusion barrier is related to the semi...

Embodiment 2

[0022] (1) In Si or SiO 2 Or on the dielectric substrate, deposit a TaN layer first. The magnetron sputtering method is adopted, and the target material is high-purity Ta. The background vacuum is 3×10 -5 Pa. Ar gas and a certain proportion of N are introduced during deposition 2 . The ratio of Ar and N2 can be varied between 9:1 and 2:1, N 2 The higher the content, the greater the resistivity of the prepared film. The final working pressure is between 0.1Pa-1Pa. The thickness of the diffusion barrier is related to the semiconductor process requirements, and can range from 50 nm to 3 nm. The thickness of the film used in this example is 5 nm.

[0023] (2) Depositing a metal Ru film doped with C by magnetron sputtering method under the condition of uninterrupted vacuum on the diffusion barrier layer. The target material uses high-purity Ru and high-purity C targets. Background vacuum is (3-5)×10 -5 Pa. Ar gas is introduced during deposition, and the working pressure is 0.1P...

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Abstract

The invention belongs to the technical field of microelectronics, in particular to a method for inhibiting oxidization of copper when a Ru adhesion layer is adopted in the copper interconnection technology. The method is mainly characterized in that: a proper amount of C is doped in an adhesion layer or a diffusion impervious layer of the copper so as to inhibit the oxidization enhancing effect of Ru on Cu in an annealing process, or inhibit the oxidization enhancing effect of Ru on Cu due to temperature rise when an integrated circuit works. In the method, the performance of Ru in a copper interconnection process for the integrated circuit is improved by improving a process for the integrated circuit, and the reliability of the Ru is ensured in the copper interconnection of the integrated circuit. The method is simple and convenient, and has strong practicability.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics, and specifically is a method for inhibiting Ru to enhance Cu oxidation. Background technique [0002] With the further shrinking of the device size, in order to reduce the thickness of the Cu diffusion barrier layer and increase the conductivity of the interconnection line, the seedless Cu interconnection technology (Cu directly electroplated on the diffusion barrier layer) has attracted more and more attention. Compared with tantalum (Ta), ruthenium (Ru) has better adhesion to Cu. Its good conductivity and compatibility with ALD process make it the first choice for ultra-thin Cu electroplating seed layer. The experimental results show that Ru and TaN film together have very good copper diffusion barrier properties. Therefore, it is believed that the introduction of Ru in the interconnection process will greatly improve the performance of the entire interconnection system. [0003] In the inte...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 丁少锋谢琦屈新萍
Owner FUDAN UNIV
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