Rotatable sputtering cathode device for film coating

Abstract

The invention discloses a rotatable sputtering cathode device for film coating which is characterized by uniform sputtering of film coating materials and high target material use ratio. The invention comprises a pair of cathode circular tubes and a circular tube shape target material, wherein the cathode circular tubes are supported in the machine frame in movable manner and the circular tube shape target material is mounted on the cathode circular tubes; a central supporting tube and a magnetic core element are supported in the cathode circular tubes; the central supporting tube as well as an isolating sleeve, a supporting seat and the cathode circular tubes form a closed cavity, a seal lug is arranged on the inner wall of the isolating sleeve to seal contact with the central supporting tube, the end part of the central supporting tube positioned outside the seal lug is provided with a through hole, the inner cavity of the central supporting tube is communicated with the water inlet tube mounted on the machine frame via the through hole and the through hole on the isolating sleeve, the cavity on the other side of the seal lug is communicated with the water outlet tube mounted on the machine frame via the water outlet through hole on the isolating sleeve, and the water outlet hole on the other end of the inner cavity of the central supporting tube is communicated with the cavity. The invention can be applied to production equipments for vacuum film coating glass.

Description

technical field [0001] The invention relates to a coating film sputtering device, in particular to a coating rotary sputtering cathode device. Background technique [0002] At present, most of the equipment for producing coated glass adopts planar sputtering cathode target. Its working principle is: the glass to be coated is sent into the vacuum coating chamber, and a certain amount of high-purity process gas is introduced into the vacuum coating chamber---such as oxygen, Nitrogen or argon, under the action of electromagnetic field and free electrons, the process gas forms positively charged plasma, which is attracted by the cathode carrying high negative voltage and bombarded according to a certain trajectory and intensity under the control of the magnetic field The coating material is fixedly installed on the planar cathode target in the vacuum coating chamber. The coating material is collided by gas molecules and deposited on the glass in a certain direction to form a fil...

AI Technical Summary

Problems solved by technology

The disadvantage of the above-mentioned planar sputtering cathode target is that since the bombardment track and the target are fixed, after a period of use, racetrack-shaped sputtering pits will be formed on the surface of the planar sputtering cathode target, which will not only damage the coating layer Uniformity, but also reduces the utilization rate of the target, need to replace the target frequently, very troublesome

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