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Method for establishing OPC model based on variable light acid diffusion length

A technology of diffusion length and photoacid, which is applied in the field of photolithography technology, can solve the problem of inaccurate OPC model and achieve the effect of improving precision and control precision

Active Publication Date: 2011-11-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The existing OPC model based on the fixed photoacid diffusion length is not accurate enough in many occasions, especially for small-sized graphics and two-dimensional graphics

Method used

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  • Method for establishing OPC model based on variable light acid diffusion length
  • Method for establishing OPC model based on variable light acid diffusion length
  • Method for establishing OPC model based on variable light acid diffusion length

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Embodiment Construction

[0023] see figure 1 , the present invention is based on the optical proximity effect correction method of variable optical acid diffusion length, comprising the following steps:

[0024] Step 1: Given a photoresist, measure the photoacid diffusion length after the photoresist has been photolithographiced to a group of mask patterns, and the group of photomask patterns have different spatial periods and / or critical dimensions respectively.

[0025] The selected mask patterns should be typical, for example, each mask pattern includes parts with different pattern line widths and / or different space line widths, ie parts with different line width / space (Line / Space) ratios. For a specific space period, there are a series of different linewidth / space ratios, for example, for a space period of 280nm, there are different linewidth / space ratios such as 120 / 160, 130 / 150, etc. Among them, 120 / 160 means that the graphic line width is 120nm, and the space line width is 160nm.

[0026] The...

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Abstract

The invention discloses a method for establishing an OPC model based on variable light acid diffusion length, which comprises the following steps of: firstly, presetting a photoresist, and measuring the light acid diffusion length after the photoresist is used for photoetching photomask figures with different spatial periods and / or critical dimensions, or finding out or measuring an initial valueof the light acid diffusion length, acquiring a plurality of guessed values according to the initial value, and selecting the guessed values according with accuracy requirements through a test sieve;and secondly, establishing the OPC model of the photoresist by using the light acid diffusion length, measured in the first step or obtained through experiments, corresponding to the photomask figures with each spatial period and / or the critical dimensions. The method uses the light acid diffusion length corresponding to the photomask figures under different conditions respectively to establish the OPC model, and improves the accuracy on small-size figures compared with the conventional method for establishing the OPC model by using a fixed light acid diffusion length, thereby improving the accuracy for an overall semiconductor manufacturing process to control photoetching figures.

Description

technical field [0001] The invention relates to a photolithography process in semiconductor manufacturing, in particular to a method for correcting optical proximity effects. Background technique [0002] In semiconductor manufacturing, as the design size continues to shrink, the diffraction effect of light becomes more and more obvious, and its result is the final optical image degradation of the design pattern, and finally the actual pattern formed by photolithography on the silicon wafer This phenomenon is called OPE (Optical Proximity Effect). [0003] The most significant effect in the OPE phenomenon is called the spatial period approximation effect (CDProximity) of the critical dimension. It is specifically manifested that as the spatial period changes, the critical dimension of the lithography pattern will change with the optical diffraction effect, and finally The critical dimensions of the photolithographic patterns after photolithography are different for the phot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/14G03F1/36
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP