Ion implanter and ion implantation method

Abstract

The invention relates to an ion implanter and an ion implantation method. The ion implanter mainly comprises a plurality of ion sources positioned side by side, a plurality of analyzing magnetic field units positioned side by side, a plurality of holes positioned side by side, a magnetic field having function of converging ion beams, and an extraction voltage source. The plural ion sources generate ion beams respectively, the generated plural ion beams are drawn out under action of the extraction voltage source, pass through the plural analyzing magnetic field units to be screened, are emitted from the other ends of the analyzing magnetic field units, pass through the plural holes, are transformed into parallel ion beams by the magnetic field having function of converging ion beams, and then the parallel ion beams are implanted into a wafer. By adopting the device and method, ion beams with width widened and uniformity improved can be generated, thus the ion implanter can obtain larger ion beams and the throughput of the machine can be enhanced.

Description

technical field [0001] The invention relates to semiconductor ion implantation technology, in particular to an ion implanter and an ion implantation method. Background technique [0002] In the semiconductor manufacturing process, in order to properly introduce dopants into chip materials under controlled conditions, it is generally achieved by doping technology, and the widely used ion implantation technology is among them. As the line width of the IC process becomes smaller and the diameter of the wafer becomes larger, it is more and more necessary to replace the single-chip implantation method using the ribbon ion beam in the high-current ion implanter. At present, a single analysis magnetic field unit (AMU) and a single ion source (source) for generating ion beams are used. The uniformity and width of the ribbon-shaped ion beams produced by this method are limited; and in fact, in order to obtain relatively wide The ion beam will lose part of the uniformity and adjustme...

AI Technical Summary

Problems solved by technology

At present, a single analysis magnetic field unit (AMU) and a single ion source (source) for generating ion beams are used. The uniformity and width of the ribbon-shaped ion beams produced by this method are limited; and in fact, in order to obtain relatively wide The ion beam will lose part of the uniformity and set-up time

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