Production method of silicon carbide ultrafine powder
A technology of silicon carbide micropowder and ultrafine powder, which is applied in the field of silicon carbide micropowder production, can solve the problems of low production efficiency, large water consumption, waste of water resources, etc., and achieve the effects of low production cost, high production efficiency and high product precision
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Embodiment 1
[0016] Such as figure 1 Shown, the silicon carbide superfine micropowder production method comprises steps:
[0017] Mix the silicon carbide micropowder with a particle size (D50)≤0.45 microns and pure water in a weight ratio of 1:5, and stir evenly;
[0018] Grading and grading to obtain silicon carbide ultrafine powder with a particle size D50 value of 0.2um-0.3um;
[0019] Dehydration and drying After dehydration, dry at a temperature of 100°C for 50 hours to obtain superfine silicon carbide powder. Silicon carbide ultrafine powder, the particle size D50 value of the powder is 0.2um-0.3um, the maximum particle size is less than 2um, and the specific surface area is 30-45m 2 / g, purity 98.5wt%, sintering temperature 1900°C, sintering density 3.15g / m 3. .
Embodiment 2
[0021] Such as figure 1 Shown, the silicon carbide superfine micropowder production method comprises steps:
[0022] Mix the silicon carbide powder with a particle size of ≤0.45 microns and water in a weight ratio of 1:8, and stir evenly;
[0023] Classification is a mechanical classification in which the high-pressure fine powder slurry is discharged through the gap between a pair of rotating classification discs, and the graded silicon carbide ultrafine powder has a particle size D50 value of 0.1um-0.2um;
[0024] Dehydration and drying After dehydration, dry at a temperature of 140° C. for 30 hours to obtain superfine silicon carbide powder. The D50 value of the fine powder particle size is 0.1um-0.2um, and the specific surface area is 40-50m 2 / g, purity 98.7wt%, sintering temperature 1860°C, sintering density 3.18g / m 3. .
[0025] Such as figure 2 As shown, the grading device used in the present invention is a submicron silicon carbide powder grading device, which i...
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