Chemically mechanical polishing solution and application thereof

Abstract

The invention discloses a chemically mechanical polishing solution and application thereof. The chemically mechanical polishing solution comprises star polymer containing pigment affinity group, ground granules, complexing agent, oxidant and water. By using the inventive polishing solution, flaws of copper billets can be reduced, partial and entire corrosion of the meal copper can be prevented, and the static corrosion velocity of copper at normal temperature and polishing temperature can be reduced under the condition of maintaining higher copper removal velocity.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid and its application. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. [0003] However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical poli...

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