Chemically mechanical polishing solution and application thereof
A chemical-mechanical, polishing liquid technology, applied in polishing compositions containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of high static corrosion rate, scratches on the surface of the substrate, etc., to improve the degree of depression , the effect of reducing the static corrosion rate
Active Publication Date: 2010-06-23
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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- Abstract
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome that in the existing chemical mechanical polishing liquid for polishing copper, it is easy to cause scratches on the substrate surface, contamination and excessive removal of copper blocks to produce depressions and copper at room temperature and polishing temperature. The
Method used
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Embodiment 1～49
[0025] Table 1 shows Examples 1-49 of the chemical mechanical polishing solution of the present invention. According to the formula given in the table, the other components except the oxidizing agent are mixed evenly, and the mass percentage is made up to 100% with water. with KOH or HNO 3 Adjust to desired pH. Add oxidant before use and mix evenly.
[0026] Table 1 Examples 1-49
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[0032]
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The invention discloses a chemically mechanical polishing solution and application thereof. The chemically mechanical polishing solution comprises star polymer containing pigment affinity group, ground granules, complexing agent, oxidant and water. By using the inventive polishing solution, flaws of copper billets can be reduced, partial and entire corrosion of the meal copper can be prevented, and the static corrosion velocity of copper at normal temperature and polishing temperature can be reduced under the condition of maintaining higher copper removal velocity.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid and its application. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. [0003] However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical poli...
Claims
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Login to view more IPC IPC(8): C09G1/02C23F3/04C23F3/06
CPCC23F3/04C09G1/02H01L21/3212
Inventor 荆建芬蔡鑫元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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