Device for manufacturing thin film by liquid phase epitaxial method
A liquid phase epitaxy and thin film technology, applied in liquid phase epitaxy layer growth, chemical instruments and methods, crystal growth and other directions, can solve problems such as uneven growth, affect product quality, and cannot meet industrial production, achieve uniform thickness, eliminate Uneven temperature field, avoid the effect of throwing out
Inactive Publication Date: 2012-05-30
NAN AN SANJING SOLAR POWER
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[0003] However, the above commonly used methods usually have the following defects. First, the growth is not uniform, which affects the quality of the product. Second, only a small amount of substrates can be operated each time, which cannot meet the needs of industrial production.
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[0026] Such as figure 1 and figure 2 As shown, a device for liquid phase epitaxial film growth includes: a valve chamber 9, a door 91 is arranged on one side of the valve chamber 9, and is used for entering and exiting the graphite flower basket; There is a furnace chamber 5 below, and the furnace chamber 5 is covered by a furnace cover 4; a graphite crucible 9 is arranged in the furnace chamber 5, and the graphite crucible is used to accommodate a quartz crucible (not shown in the figure), and the quartz crucible is used for dissolving the alloy solvent; the graphite crucible There is a graphite heater 8 outside for heating the graphite crucible; the graphite heater 8 is connected to the electrode 7 . A lifting rotating shaft 1 is installed in the valve chamber 9 and the auxiliary chamber 2, and a graphite flower basket 3 is connected to the lifting rotating shaft 1 (see image 3 ), the graphite flower basket 3 can be immersed or raised in the quartz crucible. The graphit...
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The invention relates to a device for manufacturing a thin film by a liquid phase epitaxial method, relating to an epitaxial growth device. The device comprises a valve chamber, an oven chamber, a crucible and a heating device, wherein the valve chamber is internally provided with a lifting rotating shaft; the oven chamber is arranged under the valve chamber; the crucible is arranged in the oven chamber; and the heating device is used for heating the crucible. The device is characterized in that the device also comprises a graphite flower basket which is arranged in the oven body and can move up and down in the valve chamber and the oven chamber; and the upper end of the graphite flower basket is connected with the lifting rotating shaft in a dismountable way. The device can load a plurality of substrate slices between an upper plywood and a lower plywood of the flower basket, can manufacture a plurality of epitaxial slices at one time; the flower basket can rotate along with the lifting rotating shaft so that the concentration of solution on the periphery of the substrate slices is uniform, thus eliminating the growth difference brought about by the nonuniform temperature field; and the growth liquid phase epitaxial slices have uniform thickness.
Description
technical field [0001] The invention relates to a liquid phase epitaxy device, in particular to a device for preparing thin films by liquid phase epitaxy. Background technique [0002] Liquid phase epitaxy is a method in which solid phase substances are precipitated from a solution and deposited on a substrate to form a thin single crystal layer. Invented by Nilsson in 1963, liquid phase epitaxy has become the main growth method for single crystal thin layers of compound semiconductors, and is widely used in the production of electronic devices. The same thin layer material and substrate material is called homoepitaxy, otherwise it is called heteroepitaxy. Liquid phase epitaxy can be divided into three types: tilting method, vertical method and sliding boat method. The tilting method is to tilt the quartz container in the quartz tube to a certain direction before the growth starts, and place the solution and the substrate in the container respectively. The vertical method ...
Claims
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IPC IPC(8): C30B19/06
Inventor 郑智雄南毅张伟娜王致绪邹予马殿军赵志跃汪健徐诗双洪朝海戴文伟
Owner NAN AN SANJING SOLAR POWER